SIA431DJ-T1-GE3 Vishay, SIA431DJ-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SIA431DJ-T1-GE3
• Description: P CHANNEL MOSFET, -20V, 12A
• Manufacturer: Vishay

Specifications of SIA431DJ-T1-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -12A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 25mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -850mV
• Configuration: Single
• Resistance Drain-source Rds (on): 0.07 Ohms
• Forward Transconductance Gfs (max / Min): 31 S
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 12 A
• Power Dissipation: 19 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SC-70-6L
• Gate Charge Qg: 60 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SiA431DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
0.01
0.1
0.1
www.vishay.com/ppg?65267.
1
1
10
10
-4
-4
0.05
0.02
0.2
0.2
0.1
Duty Cycle = 0.5
Duty Cycle = 0.5
Single Pulse
0.02
Single Pulse
0.05
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
10
-3
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
1
10
-2
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
S09-1536-Rev. A, 10-Aug-09
= P
t
2
Document Number: 65267
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 80 C/W
1000
10
-1