SI4477DY-T1-GE3 Vishay, SI4477DY-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI4477DY-T1-GE3
• Description: P CHANNEL MOSFET, -20V, 26.6A
• Manufacturer: Vishay

Specifications of SI4477DY-T1-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -26.6A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 6.2mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1.5V
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0062 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 18 A
• Power Dissipation: 3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4477DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
0.01
0.01
0.1
0.1
www.vishay.com/ppg?64829.
1
1
10
10
-4
-4
0.05
0.02
0.1
0.2
Single Pulse
0.1
0.2
Duty Cycle = 0.5
Duty Cycle = 0.5
Single Pulse
10
-3
0.02
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
0.05
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
1
1
A
S09-0858-Rev. A, 18-May-09
= P
t
2
Document Number: 64829
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 80 °C/W
1000
1
0