SI4477DY-T1-GE3 Vishay, SI4477DY-T1-GE3 Datasheet

no-image

SI4477DY-T1-GE3

Manufacturer Part Number
SI4477DY-T1-GE3
Description
P CHANNEL MOSFET, -20V, 26.6A
Manufacturer
Vishay
Datasheet

Specifications of SI4477DY-T1-GE3

Transistor Polarity
P Channel
Continuous Drain Current Id
-26.6A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
6.2mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-1.5V
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0062 Ohms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
18 A
Power Dissipation
3 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4477DY-T1-GE3
Manufacturer:
VISHAY
Quantity:
25 000
Part Number:
SI4477DY-T1-GE3
Manufacturer:
VISHAY
Quantity:
220
Part Number:
SI4477DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4477DY-T1-GE3
Quantity:
70 000
Company:
Part Number:
SI4477DY-T1-GE3
Quantity:
70 000
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 80 °C/W.
d. Based on T
Document Number: 64829
S09-0858-Rev. A, 18-May-09
Ordering Information: Si4477DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
PRODUCT SUMMARY
V
DS
- 20
(V)
C
= 25 °C.
0.0062 at V
0.0105 at V
G
S
S
S
R
1
2
3
4
DS(on)
GS
GS
Top View
J
(Ω)
SO-8
= - 4.5 V
= - 2.5 V
= 150 °C)
a, c
P-Channel 20-V (D-S) MOSFET
8
7
6
5
I
D
- 26.6
- 20.6
(A)
D
D
D
D
d
A
= 25 °C, unless otherwise noted
Q
g
59 nC
Steady State
(Typ.)
t ≤ 10 s
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Load Switch
• Adapter Switch
Definition
Compliant to RoHS Directive 2002/95/EC
- Notebook
- Game Station
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
D
AS
S
D
g
stg
Tested
®
Power MOSFET
Typical
34
15
- 55 to 150
- 14.5
G
- 2.5
1.95
- 18
- 26.6
- 21.3
Limit
± 12
- 5.5
3
Maximum
- 20
- 60
6.6
4.2
30
45
a, b
P-Channel MOSFET
a, b
a, b
a, b
a, b
Vishay Siliconix
41
19
S
D
Si4477DY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

Related parts for SI4477DY-T1-GE3

SI4477DY-T1-GE3 Summary of contents

Page 1

... 2 SO Top View Ordering Information: Si4477DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4477DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 64829 S09-0858-Rev. A, 18-May- 1 1.5 2.0 2.5 6000 5000 4000 3000 2000 1000 Si4477DY Vishay Siliconix 1.5 1.2 0.9 0 ° 125 ° °C C 0.0 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss ...

Page 4

... Si4477DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 ° 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.55 0.40 0.25 0.10 - 0.05 - 0. Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1 250 µ ...

Page 5

... Case Temperature (°C) C Current Derating* 2.0 1.6 1.2 0.8 0.4 0.0 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si4477DY Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www.vishay.com ...

Page 6

... Si4477DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords