SI3433BDV-T1-GE3 Vishay, SI3433BDV-T1-GE3 Datasheet - Page 5
![P CHANNEL MOSFET, -20V, 4.3A, TSOP](/photos/18/99/189973/4243386_sml.jpg)
SI3433BDV-T1-GE3
Manufacturer Part Number
SI3433BDV-T1-GE3
Description
P CHANNEL MOSFET, -20V, 4.3A, TSOP
Manufacturer
Vishay
Datasheet
1.SI3433BDV-T1-GE3.pdf
(6 pages)
Specifications of SI3433BDV-T1-GE3
Transistor Polarity
P Channel
Continuous Drain Current Id
-4.3A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
42mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-450mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3433BDV-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 72027
S09-0766-Rev. D, 04-May-09
0.01
www.vishay.com/ppg?72027.
0.1
2
1
10
-
4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
Normalized Thermal Transient Impedance, Junction-to-Foot
-
3
Square Wave Pulse Duration (s)
10
-
2
10
-
1
Vishay Siliconix
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Si3433BDV
www.vishay.com
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