SI3433BDV-T1-GE3 Vishay, SI3433BDV-T1-GE3 Datasheet - Page 4
![P CHANNEL MOSFET, -20V, 4.3A, TSOP](/photos/18/99/189973/4243386_sml.jpg)
SI3433BDV-T1-GE3
Manufacturer Part Number
SI3433BDV-T1-GE3
Description
P CHANNEL MOSFET, -20V, 4.3A, TSOP
Manufacturer
Vishay
Datasheet
1.SI3433BDV-T1-GE3.pdf
(6 pages)
Specifications of SI3433BDV-T1-GE3
Transistor Polarity
P Channel
Continuous Drain Current Id
-4.3A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
42mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-450mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3433BDV-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si3433BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
- 50
0.01
0.1
2
1
10
- 25
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
T
J
- Temperature (°C)
25
10
-3
I
D
50
= 250 µA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
100
0.1
10
10
1
0.1
-2
* V
125
GS
Limited by R
Single Pulse
T
> minimum V
Square Wave Pulse Duration (s)
A
150
V
= 25 °C
DS
Safe Operating Area
- Drain-to-Source Voltage (V)
10
1
DS(on)
-1
BVDSS Limited
GS
*
at which R
DS(on)
10
I
20
16
12
DM
1
8
4
0
10 -
Limited
is specified
2
1 ms
10 ms
100 ms
1 s
10 s
dc, 100 s
10 µs
100 µs
10 -
100
1
Single Pulse Power
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
DM
JM
Time (s)
1
- T
S09-0766-Rev. D, 04-May-09
t
A
1
T
= P
A
Document Number: 72027
t
2
= 25 °C
DM
10
Z
thJA
thJA
100
t
t
1
2
(t)
= 360 C/W
100
6
0
0
600