IRFB18N50KPBF Vishay, IRFB18N50KPBF Datasheet - Page 4
![N CHANNEL MOSFET, 500V, 17A, TO-220](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRFB18N50KPBF
Manufacturer Part Number
IRFB18N50KPBF
Description
N CHANNEL MOSFET, 500V, 17A, TO-220
Manufacturer
Vishay
Type
Power MOSFETr
Datasheets
1.IRFB18N50KPBF.pdf
(9 pages)
2.IRFB18N50KPBF.pdf
(8 pages)
3.IRFB18N50KPBF.pdf
(9 pages)
Specifications of IRFB18N50KPBF
Transistor Polarity
N Channel
Continuous Drain Current Id
17A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
290mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
290 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
2830pF @ 25V
Power - Max
220W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Gate Charge Qg
120 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.29 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
6.4 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
17 A
Power Dissipation
220000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.29Ohm
Drain-source On-volt
500V
Gate-source Voltage (max)
±30V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFB18N50KPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFB18N50KPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
IRFB18N50K, SiHFB18N50K
Vishay Siliconix
www.vishay.com
4
100000
10000
1000
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
10
20
16
12
8
4
0
1
0
I =
D
17A
V DS , Drain-to-Source Voltage (V)
30
Q , Total Gate Charge (nC)
G
V GS = 0V,
C iss
C rss
C oss = C ds + C gd
10
V
V
V
DS
DS
DS
= C gs + C gd , C ds
= C gd
60
= 400V
= 250V
= 100V
Crss
Ciss
Coss
f = 1 MHZ
90
100
SHORTED
120
1000
150
1000
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
100
0.1
0.1
10
10
1
1
Fig. 8 - Maximum Safe Operating Area
0.2
10
T
T
Single Pulse
C
J
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
V
V
T = 150 C
DS
SD
°
J
°
0.5
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
100
°
BY R
0.8
DS(on)
S09-0015-Rev. A, 19-Jan-09
Document Number: 91100
10us
100us
1ms
10ms
T = 25 C
1000
J
1.1
V
°
GS
= 0 V
10000
1.4