IRFB18N50KPBF Vishay, IRFB18N50KPBF Datasheet - Page 7
![N CHANNEL MOSFET, 500V, 17A, TO-220](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRFB18N50KPBF
Manufacturer Part Number
IRFB18N50KPBF
Description
N CHANNEL MOSFET, 500V, 17A, TO-220
Manufacturer
Vishay
Type
Power MOSFETr
Datasheets
1.IRFB18N50KPBF.pdf
(9 pages)
2.IRFB18N50KPBF.pdf
(8 pages)
3.IRFB18N50KPBF.pdf
(9 pages)
Specifications of IRFB18N50KPBF
Transistor Polarity
N Channel
Continuous Drain Current Id
17A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
290mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
290 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
2830pF @ 25V
Power - Max
220W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Gate Charge Qg
120 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.29 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
6.4 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
17 A
Power Dissipation
220000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.29Ohm
Drain-source On-volt
500V
Gate-source Voltage (max)
±30V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFB18N50KPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFB18N50KPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91100.
Document Number: 91100
S09-0015-Rev. A, 19-Jan-09
Re-applied
voltage
Reverse
recovery
current
+
-
R
D.U.T.
G
*
Driver gate drive
D.U.T. I
D.U.T. V
Inductor current
V
GS
= 5 V for logic level devices
P.W.
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode forward drop
Period
Body diode forward
+
-
Fig. 14 - For N-Channel
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - device under test
SD
Diode recovery
current
controlled by duty factor "D"
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
dI/dt
D =
-
G
IRFB18N50K, SiHFB18N50K
Period
P.W.
+
V
V
I
SD
GS
DD
= 10 V*
+
-
V
DD
Vishay Siliconix
www.vishay.com
7