IRF9630PBF Vishay, IRF9630PBF Datasheet - Page 5

P CH MOSFET, -200V, 6.5A, TO-220

IRF9630PBF

Manufacturer Part Number
IRF9630PBF
Description
P CH MOSFET, -200V, 6.5A, TO-220
Manufacturer
Vishay
Type
Power MOSFETr
Datasheets

Specifications of IRF9630PBF

Transistor Polarity
P Channel
Continuous Drain Current Id
-6.5A
Drain Source Voltage Vds
-200V
On Resistance Rds(on)
800mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
800 mOhm @ 3.9A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
6.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
29nC @ 10V
Input Capacitance (ciss) @ Vds
700pF @ 25V
Power - Max
74W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.8 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.5 A
Power Dissipation
74000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.8Ohm
Drain-source On-volt
200V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF9630PBF

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Document Number: 91084
S11-0513-Rev. C, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91084_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
91084_11
25
10
0.1
10
-2
1
10
50
T
-5
D = 0.5
0.05
0.02
0.01
0.2
0.1
C
, Case Temperature (°C)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
10
100
-4
Single Pulse
(Thermal Response)
This datasheet is subject to change without notice.
125
10
150
t
-3
1
, Rectangular Pulse Duration (s)
10
-2
10 %
90 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
GS
DS
R
0.1
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
- 10 V
V
t
GS
d(on)
V
Notes:
1. Duty Factor, D = t
2. Peak T
DS
IRF9630, SiHF9630
t
r
1
j
= P
D.U.T.
P
DM
www.vishay.com/doc?91000
DM
Vishay Siliconix
R
x Z
D
t
d(off)
t
1
1
thJC
/t
2
t
t
2
+ T
f
+
-
www.vishay.com
C
10
V
DD
5

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