IRF9630PBF Vishay, IRF9630PBF Datasheet - Page 4

• Manufacturer Part Number: IRF9630PBF
• Description: P CH MOSFET, -200V, 6.5A, TO-220
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF9630PBF

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -6.5A
• Drain Source Voltage Vds: -200V
• On Resistance Rds(on): 800mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 3.9A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.8 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.5 A
• Power Dissipation: 74000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.8Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF9630PBF

IRF9630, SiHF9630
Vishay Siliconix
www.vishay.com
4
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91084_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
91084_05
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1200
1000
800
600
400
200
20
16
12
8
4
0
0
10
0
I
0
D
= - 6.5 A
- V
5
DS ,
Q
G
, Total Gate Charge (nC)
Drain-to-Source Voltage (V)
V
10
DS
= - 40 V
V
C
C
C
V
GS
iss
rss
oss
DS
15
= C
= 0 V, f = 1 MHz
= C
= C
= - 100 V
10
gs
gd
V
ds
DS
1
+ C
+ C
20
= - 160 V
gd
gd
For test circuit
see figure 13
This datasheet is subject to change without notice.
, C
ds
25
Shorted
C
C
C
oss
iss
rss
30
91084_07
91084_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
10
0.1
10
-1
2
1
0
5
2
5
2
5
2
5
2
1
3
0.5
0.1
Fig. 8 - Maximum Safe Operating Area
2
- V
- V
5
SD
DS
Operation in this area limited
1.5
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
1
150
2
°
T
T
Single Pulse
C
C
J
by R
= 150 °C
= 25 °C
5
2.5
10
S11-0513-Rev. C, 21-Mar-11
DS(on)
www.vishay.com/doc?91000
Document Number: 91084
2
25
°
5
C
10
3.5
2
V
GS
2
10
100
1
10
ms
= 0 V
µs
ms
5
µs
10
4.5
3