IRF9620PBF Vishay, IRF9620PBF Datasheet - Page 3

• Manufacturer Part Number: IRF9620PBF
• Description: P CH MOSFET, -200V, 3.5A, TO-220
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF9620PBF

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -3.5A
• Drain Source Voltage Vds: -200V
• On Resistance Rds(on): 1.5ohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 1.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 40000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 1.5Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF9620PBF

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91082
S11-0512-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91082_01
91082_02
- 5
- 4
- 3
- 2
- 1
- 5
- 4
- 3
- 2
- 1
91082_05
0
0
Fig. 2 - Typical Transfer Characteristics
Fig. 1 - Typical Output Characteristics
0
0
0.05
0.02
0.01
2.0
1.0
0.5
0.2
0.1
V
V
- 4 V
10
- 10
DS
Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
GS
- 6 V
- 5 V
- 2
-5
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
D = 0.5
0.2
0.1
0.05
0.02
0.01
V
GS
T
T
J
T
J
= - 55
2
= - 10, - 9, - 8, - 7 V
J
= 125
= 25
- 20
- 4
°
°
°
5
C
C
C
80 µs Pulse Test
V
DS
10
- 30
- 6
> I
-4
D(on)
80 µs Pulse Test
Single Pulse (Transient
Thermal Impedence)
2
This datasheet is subject to change without notice.
x R
- 40
- 8
DS(on) max.
5
10
- 50
- 10
t
-3
1
, Square Wave Pulse Duration (s)
2
5
10
-2
91082_04
91082_03
2
10
0.1
5
10
- 5
- 4
- 3
- 2
- 1
2
1
0
5
2
5
2
5
2
Fig. 3 - Typical Saturation Characteristics
1
0
Fig. 4 - Maximum Safe Operating Area
0.1
80 µs Pulse Test
Negative V
Notes:
1. Duty Factor, D = t
2. Per Unit Base = R
3. T
2
V
JM
2
DS
- 1
- T
Operation in this area limited
, Drain-to-Source Voltage (V)
5
IRF9620, SiHF9620
C
DS
= P
5
10
, Drain-to-Source Voltage (V)
T
T
Single Pulse
DM
- 2
C
J
1.0
by R
= 150 °C
= 25 °C
Z
2
thJC
P
V
1
thJC
DM
/t
DS(on)
www.vishay.com/doc?91000
GS
2
(t)
Vishay Siliconix
2
= 3.12 °C/W
= - 10, - 9, - 8, - 7 V
5
- 3
t
1
10
5
2
t
2
2
www.vishay.com
- 4
100
1
10
10
ms
ms
µs
5
- 5 V
- 4 V
- 6 V
10
- 5
3
3