IRF9620PBF Vishay, IRF9620PBF Datasheet - Page 2

• Manufacturer Part Number: IRF9620PBF
• Description: P CH MOSFET, -200V, 3.5A, TO-220
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF9620PBF

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -3.5A
• Drain Source Voltage Vds: -200V
• On Resistance Rds(on): 1.5ohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 1.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 40000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 1.5Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF9620PBF

IRF9620, SiHF9620
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
www.vishay.com
2
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
= 25 °C, unless otherwise noted)
a
This datasheet is subject to change without notice.
SYMBOL
SYMBOL
V
R
V
R
t
t
R
R
C
I
I
C
C
V
GS(th)
DS(on)
Q
Q
V
d(on)
d(off)
I
GSS
DSS
g
Q
Q
DS
L
L
t
SM
I
t
thCS
thJC
t
t
thJA
DS
oss
SD
on
rss
S
iss
gd
rr
fs
gs
r
f
D
S
g
rr
/T
J
T
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
J
V
GS
GS
= 25 °C, I
DS
T
R
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
Reference to 25 °C, I
= - 10 V
= - 10 V
g
= 25 °C, I
= - 160 V, V
= 50 , R
V
V
V
V
V
DD
DS
f = 1.0 MHz, see fig. 5
TYP.
DS
DS
GS
0.50
TEST CONDITIONS
= - 100 V, I
-
-
= - 50 V, I
F
= V
= - 200 V, V
= 0 V, I
= - 3.5 A, dI/dt = 100 A/μs
V
V
GS
V
DS
S
GS
I
D
GS
D
= - 3.5 A, V
GS
= 67, see fig. 17
= - 25 V,
, I
= ± 20 V
= - 4.0 A, V
see fig. 11 and 18
= 0 V,
D
D
= 0 V, T
= - 250 μA
D
= - 250 μA
D
I
D
= - 1.5 A
GS
= - 1.5 A,
= - 1.5 A
D
= - 1 mA
= 0 V
GS
J
DS
G
G
= 125 °C
= 0 V
= - 160 V,
b
b
MAX.
D
S
b
b
D
S
3.1
62
b
-
b
- 200
MIN.
- 2.0
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S11-0512-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91082
- 0.22
TYP.
350
100
300
4.5
7.5
1.9
30
15
25
20
15
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
- 100
- 500
- 4.0
- 3.5
- 7.0
- 14
450
1.5
2.9
S
22
12
10
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nA
μA
pF
nC
nH
μC
ns
ns

V
V
S
A
V