IRF820PBF Vishay, IRF820PBF Datasheet - Page 5

• Manufacturer Part Number: IRF820PBF
• Description: N CHANNEL MOSFET, 500V, 2.5A TO-220
• Manufacturer: Vishay

Specifications of IRF820PBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 3ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 360pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 50000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF820PBF

Document Number: 91059
S11-0507-Rev. C, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91059_09
Vary t
required I
Fig. 9 - Maximum Drain Current vs. Case Temperature
2.5
2.0
1.5
1.0
0.5
0.0
p
91059_11
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
25
AS
10
0.1
R
10
10 V
-2
1
G
10
50
T
-5
V
0.02
0.01
D = 0.5
0.2
0.1
0.05
C
DS
, Case Temperature (°C)
t
p
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
AS
D.U.T.
10
100
-4
0.01 Ω
L
Single Pulse
(Thermal Response)
125
This datasheet is subject to change without notice.
10
t
150
-3
1
+
, Rectangular Pulse Duration (s)
-
V
DD
10
-2
Fig. 12b - Unclamped Inductive Waveforms
V
I
0.1
90 %
10 %
Fig. 10a - Switching Time Test Circuit
AS
Fig. 10b - Switching Time Waveforms
DS
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
Notes:
1. Duty Factor, D = t
2. Peak T
V
DS
t
r
1
j
t
IRF820, SiHF820
= P
p
P
DM
DM
D.U.T.
x Z
www.vishay.com/doc?91000
Vishay Siliconix
t
R
1
1
thJC
/t
D
t
2
d(off)
V
t
+ T
2
DS
C
10
t
f
V
+
-
www.vishay.com
V
DD
DD
5