IRF820PBF Vishay, IRF820PBF Datasheet - Page 4

• Manufacturer Part Number: IRF820PBF
• Description: N CHANNEL MOSFET, 500V, 2.5A TO-220
• Manufacturer: Vishay

Specifications of IRF820PBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 3ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 360pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 50000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF820PBF

IRF820, SiHF820
Vishay Siliconix
www.vishay.com
4
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91059_05
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
91059_06
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
800
600
400
200
20
16
12
0
8
4
0
10
0
0
I
D
= 2.1 A
V
4
DS ,
Q
G
Drain-to-Source Voltage (V)
V
, Total Gate Charge (nC)
DS
8
= 100 V
V
V
C
C
C
DS
GS
iss
rss
oss
12
= 250 V
= 0 V, f = 1 MHz
= C
= C
= C
V
10
gs
gd
DS
ds
1
C
C
C
+ C
+ C
= 400 V
iss
oss
rss
16
gd
gd
For test circuit
see figure 13
, C
This datasheet is subject to change without notice.
ds
20
Shorted
24
91059_07
91059_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
0.1
10
-2
1
0
2
5
2
5
2
5
2
5
2
Fig. 8 - Maximum Safe Operating Area
0.4
0.1
2
150
5
V
V
°
C
SD
DS
1
Operation in this area limited
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
0.6
2
5
T
T
Single Pulse
10
C
J
by R
= 150 °C
= 25 °C
2
0.8
25
DS(on)
S11-0507-Rev. C, 21-Mar-11
5
www.vishay.com/doc?91000
°
10
C
Document Number: 91059
2
2
1.0
5
10
100
1
10
10
V
ms
µs
ms
3
GS
µs
2
= 0 V
5
10
1.2
4