IRF7220PBF International Rectifier, IRF7220PBF Datasheet - Page 4

• Manufacturer Part Number: IRF7220PBF
• Description: P CHANNEL MOSFET, -14V, 11A, SOIC
• Manufacturer: International Rectifier

Specifications of IRF7220PBF

• Transistor Polarity: P Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: -14V
• On Resistance Rds(on): 12mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -600mV
• Channel Type: P
• Current, Drain: ±11 A
• Gate Charge, Total: 84 nC
• Package Type: SO-8
• Polarization: P-Channel
• Power Dissipation: 2.5 W
• Resistance, Drain To Source On: 0.0082 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 140 ns
• Time, Turn-on Delay: 19 ns
• Transconductance, Forward: 8.4 S
• Voltage, Breakdown, Drain To Source: -14 V
• Voltage, Drain To Source: –12 V
• Voltage, Forward, Diode: -1.2 V
• Voltage, Gate To Source: ±12 V
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 12 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 11 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Fall Time: 1040 ns
• Gate Charge Qg: 84 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 420 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7220
4
1 0 0 0 0
1 0 0
9 0 0 0
8 0 0 0
7 0 0 0
6 0 0 0
5 0 0 0
4 0 0 0
0.1
1 0
1
0.0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
T = 150°C
1
J
Drain-to-Source Voltage
C
C
C
-V
-V
iss
oss
rss
0.5
S D
D S
Forward Voltage
V
C
C
C
, S ou rce-to-D ra in Voltage (V)
, D rain-to-So urc e Voltage (V)
G S
is s
rs s
o s s
T = 25°C
= 0V,
J
= C
= C
= C
1.0
g s
d s
g d
+ C
+ C
g d
g d
f = 1kHz
1.5
, C
d s
SH ORTE D
2.0
V
G S
= 0V
2.5
1 0
A
A
1000
100
10
Fig 8. Maximum Safe Operating Area
10
8
6
4
2
0
1
0.1
0
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
A
J
= 25 C
= 150 C
-11A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
-V
20
DS
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
40
1
BY R
60
DS(on)
V
DS
=-10V
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10
80
100us
1ms
10ms
100
100
120