IRF7220PBF International Rectifier, IRF7220PBF Datasheet - Page 2

• Manufacturer Part Number: IRF7220PBF
• Description: P CHANNEL MOSFET, -14V, 11A, SOIC
• Manufacturer: International Rectifier

Specifications of IRF7220PBF

• Transistor Polarity: P Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: -14V
• On Resistance Rds(on): 12mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -600mV
• Channel Type: P
• Current, Drain: ±11 A
• Gate Charge, Total: 84 nC
• Package Type: SO-8
• Polarization: P-Channel
• Power Dissipation: 2.5 W
• Resistance, Drain To Source On: 0.0082 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 140 ns
• Time, Turn-on Delay: 19 ns
• Transconductance, Forward: 8.4 S
• Voltage, Breakdown, Drain To Source: -14 V
• Voltage, Drain To Source: –12 V
• Voltage, Forward, Diode: -1.2 V
• Voltage, Gate To Source: ±12 V
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 12 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 11 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Fall Time: 1040 ns
• Gate Charge Qg: 84 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 420 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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IRF7220
Source-Drain Ratings and Characteristics
Notes:
Electrical Characteristics @ T
I
I
V
t
Q
SM
S
rr
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
R
I
d(on)
d(off)
2
I
r
f
SD
DSS
rr
Repetitive rating; pulse width limited by
V
Pulse width
fs
(BR)DSS
GS(th)
GSS
iss
oss
rss
max. junction temperature.
g
gs
gd
DS(on)
(BR)DSS
/ T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
300µs; duty cycle
Parameter
Parameter
2%.
J
= 25°C (unless otherwise specified)
ƒ
„
When mounted on 1 inch square copper board, t<10 sec
R
Starting T
Min. Typ. Max. Units
–––
–––
–––
–––
–––
-0.60 –––
G
Min. Typ. Max. Units
––– -0.006 –––
––– .0082 0.012
––– .0125 0.020
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1040 –––
––– 8075 –––
––– 4400 –––
––– 4150 –––
-14
8.4
= 25 , I
–––
160
147
–––
–––
–––
–––
––– -100
––– -100
–––
420
140
–––
84
13
37
19
J
= 25°C, L = 1.8mH
AS
-1.2
220
240
= 11A. (See Figure 10)
-88
-2.5
-5.0
–––
–––
–––
125
–––
–––
–––
100
20
55
V/°C
nC
ns
µA
V
nA
nC
ns
pF
A
V
S
V
p-n junction diode.
di/dt = 100A/µs
MOSFET symbol
showing the
integral reverse
T
T
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
J
J
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 25°C, I
= 25°C, I
= -11A
= -11A
= 0.91 ‚
= 6.2
= 0V, I
= -4.5V, I
= -2.5V, I
= V
= -10V, I
= -11.2V, V
= -11.2V, V
= -12V
= 12V
= -10V
= -5.0V ‚
= -10V
= 0V
= -10V
GS
Conditions
, I
D
S
F
Conditions
D
= -5mA
= -2.5A
= -2.5A, V
D
D
D
= -250µA
‚
= -11A
= -11A ‚
= -8.8A ‚
GS
GS
= 0V
= 0V, T
www.irf.com
D
= -1mA
GS
G
= 0V ‚
J
= 70°C
D
S