BSS139 Infineon Technologies, BSS139 Datasheet - Page 2

• Manufacturer Part Number: BSS139
• Description: N CHANNEL MOSFET, 250V, 40mA SOT-23
• Manufacturer: Infineon Technologies

Specifications of BSS139

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 40mA
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 100ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: -1.4V
• Package: SOT-23
• Vds (max): 250.0 V
• Id (max): 0.1 A
• Idpuls (max): 0.4 A
• Rds (on) (max) (@10v): 14.0 Ohm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.5
2)
Parameter
Thermal characteristics
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cutoff current
Gate-source leakage current
On-state drain current
Drain-source on-state resistance
Transconductance
Threshold voltage V
J
K
L
M
N
Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific
band cannot be ordered separately.
GS(th)
sorted in bands
j
=25 °C, unless otherwise specified
Symbol Conditions
R
V
V
I
I
I
R
g
V
D(off)
GSS
DSS
fs
(BR)DSS
GS(th)
GS(th)
thJA
DS(on)
2)
minimal footprint
V
V
V
V
V
V
V
V
V
V
|V
I
V
D
GS
DS
DS
GS
DS
GS
GS
GS
GS
GS
DS
=0.08 A
DS
page 2
=3 V, I
=250 V,
=250 V,
=3 V, I
=-3 V, I
=-3 V, T
=-3 V, T
=20 V, V
=0 V, V
=0 V, I
=10 V,I
|>2|I
D
|R
D
D
D
D
D
DS
=56 µA
=15 mA
=56 µA
j
j
=0.1 mA
=250 µA
DS(on)max
=25 °C
=125 °C
DS
=10 V
=0 V
,
0.060
-1.35
-1.65
min.
-2.1
-1.2
-1.5
-1.8
250
30
-
-
-
-
-
-
Values
12.5
0.13
typ.
-1.4
7.8
-
-
-
-
-
-
-
-
-
-
-
max.
-1.15
-1.45
350
-1.3
-1.6
0.1
10
10
30
14
-1
-1
-
-
-
BSS139
2006-04-27
Unit
K/W
V
µA
nA
mA
S
V