SI9926BDY-T1-GE3 Vishay, SI9926BDY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI9926BDY-T1-GE3
• Description: DUAL N CHANNEL MOSFET, 20V, 6.2A
• Manufacturer: Vishay

Specifications of SI9926BDY-T1-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6.2A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 20mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72278
S09-0870-Rev. C, 18-May-09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
30
10
0
5
4
3
2
1
0
0
0
0
V
I
Source-Drain Diode Forward Voltage
D
DS
= 8.2 A
On-Resistance vs. Drain Current
2
V
5
GS
= 10 V
0.3
V
SD
= 2.5 V
T
Q
J
g
= 150 °C
- Source-to-Drain Voltage (V)
10
4
I
- Total Gate Charge (nC)
D
Gate Charge
- Drain Current (A)
0.6
15
6
0.9
T
J
= 25 °C
20
8
V
GS
1.2
= 4.5 V
10
25
1.5
12
30
1600
1400
1200
1000
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
- 25
V
I
rss
D
GS
I
= 8.2 A
D
= 3.3 A
4
= 4.5 V
1
V
V
GS
0
DS
T
J
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
C
Capacitance
25
oss
8
2
I
D
C
50
Vishay Siliconix
= 8.2 A
iss
Si9926BDY
12
3
75
www.vishay.com
100
16
4
125
150
20
5
3