SI9926BDY-T1-E3 Vishay, SI9926BDY-T1-E3 Datasheet

MOSFET DUAL N-CH 20V 6.2A 8-SOIC

SI9926BDY-T1-E3

Manufacturer Part Number
SI9926BDY-T1-E3
Description
MOSFET DUAL N-CH 20V 6.2A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Type
Power MOSFETr

Specifications of SI9926BDY-T1-E3

Transistor Polarity
N-Channel
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 8.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6.2A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 4.5V
Power - Max
1.14W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.02 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
6.2 A
Power Dissipation
1140 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
8.2A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
20mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
600mV
Power Dissipation Pd
2W
Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.02Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±12V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI9926BDY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI9926BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 892
Part Number:
SI9926BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
8 000
Part Number:
SI9926BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI9926BDY-T1-E3
Quantity:
2 500
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72278
S-61006-Rev. B, 12-Jun-06
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
Ordering Information: Si9926BDY-T1
20
(V)
G
G
S
S
1
1
2
2
1
2
3
4
0.020 at V
0.030 at V
Top View
Si9926BDY-T1-E3 (Lead (Pb)-free)
r
SO-8
DS(on)
J
a
= 150 °C)
Dual N-Channel 2.5-V (G-S) MOSFET
a
GS
GS
(Ω)
= 4.5 V
= 2.5 V
8
7
6
5
a
D
D
D
D
1
1
2
2
a
A
New Product
= 25 °C, unless otherwise noted
I
Steady State
Steady State
D
8.2
6.7
T
T
T
T
t ≤ 10 sec
(A)
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• TrenchFET
G
Symbol
Symbol
T
1
R
R
J
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
N-Channel MOSFET
D
stg
D
S
1
1
®
Power MOSFETS
Typical
10 sec
8.2
6.5
1.7
2.0
1.3
52
90
32
- 55 to 150
G
2
± 12
20
30
N-Channel MOSFET
Steady State
Maximum
0.95
1.14
0.72
62.5
110
6.2
4.9
40
D
Vishay Siliconix
S
2
2
Si9926BDY
www.vishay.com
°C/W
Unit
Unit
RoHS*
COMPLIANT
°C
W
V
A
Available
Pb-free
1

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SI9926BDY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si9926BDY-T1 Si9926BDY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS ...

Page 2

... Si9926BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Gate Charge 150 ° 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72278 S-61006-Rev. B, 12-Jun- 4 °C J 0.9 1.2 1.5 Si9926BDY Vishay Siliconix 1600 1400 C iss 1200 1000 800 600 C oss 400 200 C rss Drain-to-Source Voltage (V) DS Capacitance ...

Page 4

... Si9926BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 0 250 µA D 0.2 0.0 - 0.2 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 r Limited DS(on D(on) Limited °C A 0.1 ...

Page 5

... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72278. Document Number: 72278 S-61006-Rev. B, 12-Jun- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Si9926BDY Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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