SI4944DY-T1-GE3 Vishay, SI4944DY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4944DY-T1-GE3
• Description: DUAL N CHANNEL MOSFET, 30V, 12.2A
• Manufacturer: Vishay

Specifications of SI4944DY-T1-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 12.2A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 16mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4944DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
0.4
0.2
0.0
0.01
- 50
0.1
2
1
10 -
- 25
4
0.02
Duty Cycle = 0.5
0.1
0.05
0.2
0
Threshold Voltage
T
J
25
- Temperature (°C)
10 -
Single Pulse
3
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
= 250 µA
0.01
100
0.1
10
100
1
0.1
10 -
* Limited by
Limited
I
2
D(on)
* V
125
Single Pulse
GS
T
A
> minimum V
= 25 °C
V
150
R
DS
Square Wave Pulse Duration (s)
DS(on)
- Drain-to-Source Voltage (V)
Safe Operating Area
1
10 -
1
GS
BVDSS Limited
at which R
10
DS(on)
1
50
40
30
20
10
0
0.01
I
DM
is specified
Limited
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
100
0.1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Single Pulse Power
P
DM
JM
-
1
T
t
Time (s)
A
1
= P
t
S-82284-Rev. B, 22-Sep-08
2
DM
Document Number: 72512
Z
thJA
thJA
100
10
t
t
1
2
(t)
= 75 °C/W
100
600
600