SI4562DY-T1-E3 Vishay, SI4562DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4562DY-T1-E3
• Description: DUAL N/P CHANNEL MOSFET, 20V, SOIC
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI4562DY-T1-E3

• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 7.1A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 19mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.025 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 7.1 A, - 6.2 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70717
S09-0867-Rev. C, 18-May-09
0.10
0.08
0.06
0.04
0.02
0.00
40
30
20
10
0
5
4
3
2
1
0
0.0
0
0
V
I
D
0.5
DS
= 7.1 A
On-Resistance vs. Drain Current
= 10 V
5
V
1.0
DS
Output Characteristics
10
Q
V
- Drain-to-Source Voltage (V)
g
GS
V
- Total Gate Charge (nC)
1.5
I
Gate Charge
D
= 5 V thru 3 V
GS
10
- Drain Current (A)
= 2.5 V
2.0
20
15
2.5
V
GS
3.0
30
= 4.5 V
1 V, 1.5 V
20
2.5 V
3.5
2 V
4.0
25
40
4000
3200
2400
1600
800
1.6
1.4
1.2
1.0
0.8
0.6
40
30
20
10
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
V
I
D
rss
GS
- 25
= 7.1 A
0.5
= 4.5 V
4
V
V
Transfer Characteristics
GS
DS
0
T
- Gate-to-Source Voltage (V)
C
C
- Drain-to-Source Voltage (V)
J
1.0
25 °C
iss
oss
- Junction Temperature (°C)
Capacitance
25
T
C
8
= 125 °C
1.5
50
Vishay Siliconix
12
75
Si4562DY
- 55 °C
2.0
www.vishay.com
100
16
2.5
125
150
3.0
20
3