SI4562DY-T1-E3 Vishay, SI4562DY-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4562DY-T1-E3
• Description: DUAL N/P CHANNEL MOSFET, 20V, SOIC
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI4562DY-T1-E3

• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 7.1A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 19mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.025 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 7.1 A, - 6.2 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4562DY
Vishay Siliconix
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Sorce-Drain Reverse Recovery Tme
b
b
b
b
J
= 25 °C, unless otherwise noted
b
Symbol
R
V
I
t
t
I
I
GS(th)
D(on)
DS(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
t
t
SD
t
rr
fs
gs
gd
r
f
g
V
V
I
V
DS
D
V
I
DS
DS
D
DS
≅ - 1 A, V
= - 10 V, V
I
≅ 1 A, V
I
F
= - 20 V, V
F
V
V
V
= 10 V, V
V
V
V
= 20 V, V
V
V
V
= - 1.7 A, dI/dt = 100 A/µs
V
V
V
V
DS
GS
GS
I
= 1.7 A, dI/dt = 100 A/µs
DS
V
V
DS
DS
I
S
DD
DS
DS
DS
GS
GS
S
DD
DS
DS
= - 1.7 A, V
≤ - 5 V, V
= 1.7 A, V
= V
= - 4.5 V, I
= - 2.5 V, I
= - 10 V, I
= 0 V, V
= V
= - 20 V, V
= - 10 V, R
≥ 5 V, V
= 4.5 V, I
= 2.5 V, I
= 20 V, V
= 10 V, R
= 10 V, I
N-Channel
N-Channel
GEN
GEN
P-Channel
P-Channel
GS
GS
Test Conditions
GS
GS
GS
GS
, I
, I
= - 4.5 V, I
= 4.5 V, R
= - 4.5 V, R
= 4.5 V, I
D
= 0 V, T
GS
D
= 0 V, T
GS
GS
= - 250 µA
D
D
GS
D
D
D
D
= 250 µA
GS
GS
L
GS
L
= ± 12 V
= 7.1 A
= - 6.2 A
= - 4.5 V
= 7.1 A
= - 6.2 A
= 6.0 A
= - 5.0 A
= 4.5 V
= 10 Ω
= 0 V
= 10 Ω
= 0 V
= 0 V
= 0 V
J
J
D
D
g
= 55 °C
= 55 °C
= 7.1 A
g
= - 6.2 A
= 6 Ω
= 6 Ω
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
Min.
- 0.6
- 20
0.6
20
0.019
0.027
0.025
0.040
Typ.
S09-0867-Rev. C, 18-May-09
6.5
3.5
27
20
25
22
40
27
40
32
90
95
40
45
40
40
7
4
Document Number: 70717
± 100
± 100
0.025
0.033
0.035
0.050
Max.
- 1.6
- 1.2
150
150
1.6
1.2
- 1
- 5
50
35
60
50
60
50
60
70
80
80
1
5
Unit
nA
µA
nC
ns
Ω
V
A
S
V