J304-E3 Vishay, J304-E3 Datasheet

N CHANNEL JFET, -40V, TO-92

J304-E3

Manufacturer Part Number
J304-E3
Description
N CHANNEL JFET, -40V, TO-92
Manufacturer
Vishay
Datasheet

Specifications of J304-E3

Breakdown Voltage Vbr
-40V
Gate-source Cutoff Voltage Vgs(off) Max
-1.5V
Power Dissipation Pd
350mW
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Continuous Drain Current Id
1mA
Channel Type
N
Configuration
Single
Gate-source Voltage (max)
-30V
Drain-gate Voltage (max)
-30V
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-92
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
DESCRIPTION
The J304/305 n-channel JFETs provide high-performance
amplification, especially at high-frequency. These products
are available in tape and reel for automated assembly (see
Package Information).
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage
Forward Gate Current
Storage Temperature
Operating Junction Temperature
PRODUCT SUMMARY
FEATURES
D Excellent High Frequency Gain: J304,
D Very Low Noise: 3.8 dB (typ) @
D Very Low Distortion
D High ac/dc Switch Off-Isolation
D High Gain: A
Document Number: 70236
S-50077—Rev. E, 24-Jan-05
Part Number
Gps 11 dB (typ) @ 400 MHz
400 MHz
J304
J305
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 60 @ 100 mA
V
GS(off)
−0.5 to −3
−2 to −6
. . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(V)
V
(BR)GSS
−30
−30
Min (V)
BENEFITS
D Wideband High Gain
D Very High System Sensitivity
D High Quality of Amplification
D High-Speed Switching Capability
D High Low-Level Signal Amplification
N-Channel JFETs
−55 to 150_C
−55 to 150_C
G
D
S
g
10 mA
−30 V
fs
TO-226AA
Top View
(TO-92)
Min (mS)
4.5
1
2
3
3
For similar products in TO-236 (SOT-23) packages, see the
2N/SST5484 series data sheet, or in TO-206AF (TO-72)
packages, see the 2N/SST4416 series data sheet.
Lead Temperature (
Power Dissipation
Notes
a.
I
DSS
Derate 2.8 mW/_C above 25_C
Min (mA)
5
1
a
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
/
16
” from case for 10 sec.)
APPLICATIONS
D High-Frequency Amplifier/Mixer
D Oscillator
D Sample-and-Hold
D Very Low Capacitance Switches
Vishay Siliconix
. . . . . . . . . . . . . . . . . . .
J304/305
www.vishay.com
350 mW
300_C
1

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J304-E3 Summary of contents

Page 1

... D Very Low Distortion D High ac/dc Switch Off-Isolation D High Gain 100 mA V DESCRIPTION The J304/305 n-channel JFETs provide high-performance amplification, especially at high-frequency. These products are available in tape and reel for automated assembly (see Package Information). ABSOLUTE MAXIMUM RATINGS Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 2

... NF Limits J304 J305 Min Max Min a Typ −35 −30 −30 −2 −6 −0 −2 −100 −0.2 −20 2 200 0.7 4.5 7 2.2 0 Limits (Typ) J304 J305 100 400 100 MHz MHz MHz 80 800 7 0.8 3.6 0.8 4.4 4 1.7 3.8 G Document Number: 70236 S-50077— ...

Page 3

... V 2 100 −8 − GSS @ 125_C 25_C GSS −0.2 V −0.4 V −0.6 V −0.8 V −1.0 V −1.2 V −1 J304/305 Vishay Siliconix On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 300 mA kHz −2 −4 −6 −8 V − Gate-Source Cutoff Voltage (V) GS(off) Common-Source Forward Transconductance vs. Drain Current V = − ...

Page 4

... J304/305 Vishay Siliconix TYPICAL CHARACTERISTICS (T Transfer Characteristics −2 V GS(off −55_C A 25_C 6 125_C −0.4 −0.8 −1.2 V − Gate-Source Voltage (V) GS Transconductance vs. Gate-Source Voltage − GS(off −55_C A 6 25_C 4 125_C −0.4 −0.8 −1.2 V − Gate-Source Voltage (V) GS On-Resistance vs. Drain Current 300 T = 25_C A 240 V = − ...

Page 5

... S-50077—Rev. E, 24-Jan-05 = 25_C UNLESS OTHERWISE NOTED) A Common-Source Reverse Feedback Capacitance 2.4 1.8 1.2 0.6 −16 −20 100 0.1 1000 −b rs −g rs 0.1 0.01 1000 J304/305 Vishay Siliconix vs. Gate-Source Voltage MHz −4 −8 −12 −16 V − Gate-Source Voltage (V) GS Forward Admittance T = 25_C A ...

Page 6

... J304/305 Vishay Siliconix TYPICAL CHARACTERISTICS (T Equivalent Input Noise Voltage vs. Frequency 100 − Frequency (Hz) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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