2N5114-E3 Vishay, 2N5114-E3 Datasheet - Page 5

• Manufacturer Part Number: 2N5114-E3
• Description: P CHANNEL JFET, 45V, TO-206AA
• Manufacturer: Vishay

Specifications of 2N5114-E3

• Breakdown Voltage Vbr: 45V
• Gate-source Cutoff Voltage Vgs(off) Max: 10V
• Power Dissipation Pd: 500mW
• Operating Temperature Range: -55°C To +200°C
• No. Of Pins: 3
• Transistor Polarity: P Channel
• Channel Type: P
• Configuration: Single
• Gate-source Voltage (max): 30V
• Drain-gate Voltage (max): 30V
• Operating Temperature (min): -55C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Continuous Drain Current Id: -90mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 70240
S-40990—Rev. F, 24-May-04
TYPICAL CHARACTERISTICS (T
500
400
300
200
100
200
160
120
1.5
1.2
0.9
0.6
0.3
80
40
0
0
0
0
0
0.01
Transconductance vs. Gate-Source Voltage
V
V
Circuit Voltage Gain vs. Drain Current
Assume V
GS(off)
A
R
GS(off)
T
V
L
125_C
A
−0.1
−0.1
+
= −55_C
+
T
= −0.7 V
−1.5 V
A
= −0.7 V
1 ) R
V
V
Transfer Characteristics
10 V
= −55_C
GS
GS
I
125_C
g
D
DD
fs
I
− Gate-Source Voltage (V)
− Gate-Source Voltage (V)
D
R
= 15 V, V
− Drain Current (mA)
L
L
g
−0.2
−0.2
os
25_C
0.1
25_C
DS
= 5 V
V
−0.3
−0.3
GS(off
)
V
f = 1 kHz
= −0.7 V
V
DS
DS
= 10 V
−0.4
−0.4
= 10 V
A
= 25_C UNLESS OTHERWISE NOTED)
−0.5
−0.5
1
2000
1600
1200
800
400
3.2
2.4
1.6
0.8
1.6
1.2
0.8
0.4
4
0
2
0
0
0
0
0.01
Transconductance vs. Gate-Source Voltage
V
V
125_C
GS(off)
T
GS(off)
T
A
A
V
T
125_C
On-Resistance vs. Drain Current
= 25_C
A
−0.4
−0.4
GS(off)
= −55_C
= −55_C
= −1.5 V
= −1.5 V
V
V
2N4338/4339/4340/4341
Transfer Characteristics
GS
GS
25_C
= −0.7 V
I
− Gate-Source Voltage (V)
− Gate-Source Voltage (V)
D
− Drain Current (mA)
25_C
−0.8
−0.8
−1.5 V
0.1
−1.2
−1.2
Vishay Siliconix
V
V
f = 1 kHz
DS
DS
= 10 V
= 10 V
−1.6
−1.6
www.vishay.com
−2
−2
1
5