2N4416A Vishay, 2N4416A Datasheet

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2N4416A

Manufacturer Part Number
2N4416A
Description
Transistor
Manufacturer
Vishay
Datasheets

Specifications of 2N4416A

No. Of Pins
4
Continuous Drain Current Id
15mA
Gate-source Breakdown Voltage
-35V
Mounting Type
Through Hole
Peak Reflow Compatible (260 C)
No
Transistor Polarity
N Channel
Current Rating
10mA
Channel Type
N
Configuration
Single
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
4
Gate-source Cutoff Voltage
-6V
Leaded Process Compatible
No
Rohs Compliant
No
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N4416A
Manufacturer:
CDE
Quantity:
1 434
Part Number:
2N4416A
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
2N4416A
Quantity:
7 000
Company:
Part Number:
2N4416A-E3
Quantity:
70 000
The 2N4416/2N4416A/SST4416 n-channel JFETs are
designed to provide high-performance amplification at high
frequencies.
For applications information see AN104.
D Excellent High-Frequency Gain:
D Very Low Noise: 3 dB (typ) @
D Very Low Distortion
D High AC/DC Switch Off-Isolation
Document Number: 70242
S-04028—Rev. F, 04-Jun-01
Part Number
2N4416/A, Gps 13 dB (typ) @
400 MHz
400 MHz
2N4416A
SST4416
2N4416
D
V
S
GS(off)
–2.5 to –6
–v6
–v6
1
2
TO-206AF
2N4416A
Top View
(TO-72)
(V)
2N4416
V
3
(BR)GSS
4
C
G
–30
–35
–30
D Wideband High Gain
D Very High System Sensitivity
D High Quality of Amplification
D High-Speed Switching Capability
D High Low-Level Signal Amplification
Min (V)
N-Channel JFETs
g
fs
Min (mS)
4.5
4.5
4.5
The TO-206AF (TO-72) hermetically-sealed package is
available
Information.) The TO-236 (SOT-23) package provides a
low-cost option and is available with tape-and-reel options
(see Packaging Information). For similar products in the
TO-226AA (TO-92) package, see the J304/305 data sheet.
I
DSS
2N4416/2N4416A/SST4416
Min (mA)
with
5
5
5
D
S
*Marking Code for TO-236
full
1
2
D High-Frequency Amplifier/Mixer
D Oscillator
D Sample-and-Hold
D Very Low Capacitance Switches
SST4416 (H1)*
(SOT-23)
military
Top View
TO-236
processing
Vishay Siliconix
3
G
(see
www.vishay.com
Military
7-1

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2N4416A Summary of contents

Page 1

... SST4416 –v6 D Excellent High-Frequency Gain: 2N4416/A, Gps 13 dB (typ) @ 400 MHz D Very Low Noise (typ) @ 400 MHz D Very Low Distortion D High AC/DC Switch Off-Isolation The 2N4416/2N4416A/SST4416 n-channel JFETs are designed to provide high-performance amplification at high frequencies. TO-206AF (TO-72 Top View ...

Page 2

... kHz MHz kHz –55 to 150 (2N Prefix 300 mW b (SST Prefix 350 mW Limits 2N4416 2N4416A SST4416 Min Max Min Max Min Max Unit –30 –35 –30 –6 –2.5 –6 – –100 –100 –100 –100 –1 4.5 7.5 4.5 7.5 4.5 7.5 ...

Page 3

... 500 8 400 6 300 4 200 = 100 –8 – –0 –0 –0.6 V –0.8 V –1 –1.2 V –1 2N4416/2N4416A/SST4416 Vishay Siliconix _ Limits 100 MHz 400 MHz Min Max Min 100 2,500 = 1,000 4,000 = On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage mA VDS = kHz –2 –4 –6 – ...

Page 4

... Vishay Siliconix Output Characteristics –2 V GS(off 0.2 0.4 0.6 V – Drain-Source Voltage (V) DS Transfer Characteristics –2 V GS(off –55_C A 25_C 6 125_C –0.4 –0.8 –1.2 V – Gate-Source Voltage (V) GS Transconductance vs. Gate-Source Voltage –2 V GS(off –55_C A 6 25_C 4 125_C –0.4 –0.8 –1.2 V – Gate-Source Voltage (V) GS www ...

Page 5

... Frequency (MHz) Document Number: 70242 S-04028—Rev. F, 04-Jun-01 _ 100 0.1 3 2.4 1.8 1.2 0.6 0 –16 –20 0 100 0.1 100 500 1000 2N4416/2N4416A/SST4416 Vishay Siliconix Circuit Voltage Gain vs. Drain Current Assume –2 V GS(off) – – Drain Current (mA Common-Source Reverse Feedback Capacitance vs ...

Page 6

... Vishay Siliconix Reverse Admittance 25_C Common Source 1 0.1 0.01 100 200 f – Frequency (MHz) Gate Leakage Current 100 0 125_C A 100 0 25_C 0 – Drain-Gate Voltage (V) DG Equivalent Input Noise Voltage vs. Frequency 100 – Frequency (Hz) www.vishay.com 7-6 _ –b rs –g rs 0.1 0.01 1000 ...

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