2N4416A Vishay, 2N4416A Datasheet

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2N4416A

Manufacturer Part Number
2N4416A
Description
Transistor
Manufacturer
Vishay
Datasheets

Specifications of 2N4416A

No. Of Pins
4
Continuous Drain Current Id
15mA
Gate-source Breakdown Voltage
-35V
Mounting Type
Through Hole
Peak Reflow Compatible (260 C)
No
Transistor Polarity
N Channel
Current Rating
10mA
Channel Type
N
Configuration
Single
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
4
Gate-source Cutoff Voltage
-6V
Leaded Process Compatible
No
Rohs Compliant
No
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N4416A
Manufacturer:
CDE
Quantity:
1 434
Part Number:
2N4416A
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
2N4416A
Quantity:
7 000
Company:
Part Number:
2N4416A-E3
Quantity:
70 000
DESCRIPTION
The 2N4416/2N4416A/SST4416 n-channel JFETs are
designed to provide high-performance amplification at high
frequencies.
For applications information see AN104.
PRODUCT SUMMARY
FEATURES
D Excellent High-Frequency Gain:
D Very Low Noise: 3 dB (typ) @
D Very Low Distortion
D High AC/DC Switch Off-Isolation
Document Number: 70242
S-50147—Rev. H, 24-Jan-05
Part Number
2N4416/A, Gps 13 dB (typ) @
400 MHz
400 MHz
2N4416A
SST4416
2N4416
D
V
S
GS(off)
−2.5 to −6
−v6
−v6
1
2
TO-206AF
2N4416A
Top View
(TO-72)
(V)
2N4416
V
3
(BR)GSS
4
C
G
−30
−35
−30
BENEFITS
D Wideband High Gain
D Very High System Sensitivity
D High Quality of Amplification
D High-Speed Switching Capability
D High Low-Level Signal Amplification
Min (V)
N-Channel JFETs
g
fs
Min (mS)
4.5
4.5
4.5
The TO-206AF (TO-72) hermetically-sealed package is
available
Information.) The TO-236 (SOT-23) package provides a
low-cost option and is available with tape-and-reel options
(see Packaging Information). For similar products in the
TO-226AA (TO-92) package, see the J304/305 data sheet.
I
DSS
2N4416/2N4416A/SST4416
Min (mA)
with
5
5
5
D
S
*Marking Code for TO-236
full
1
2
APPLICATIONS
D High-Frequency Amplifier/Mixer
D Oscillator
D Sample-and-Hold
D Very Low Capacitance Switches
SST4416 (H1)*
(SOT-23)
military
Top View
TO-236
processing
Vishay Siliconix
3
G
(see
www.vishay.com
Military
1

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2N4416A Summary of contents

Page 1

... SST4416 −v6 FEATURES D Excellent High-Frequency Gain: 2N4416/A, Gps 13 dB (typ) @ 400 MHz D Very Low Noise (typ) @ 400 MHz D Very Low Distortion D High AC/DC Switch Off-Isolation DESCRIPTION The 2N4416/2N4416A/SST4416 n-channel JFETs are designed to provide high-performance amplification at high frequencies. TO-206AF (TO-72 Top View ...

Page 2

... 0 MHz kHz . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150 _C a (2N Prefix 300 mW b (SST Prefix 350 mW Limits 2N4416 2N4416A SST4416 Min Max Min Max Min Max Unit −30 −35 −30 −6 −2.5 −6 − −100 −100 −100 −100 −1 4.5 7.5 4.5 7.5 4.5 7 ...

Page 3

... HIGH-FREQUENCY SPECIFICATIONS FOR 2N4416/2N4416A (T Parameter d Common Source Input Conductance d Common Source Input Susceptance d Common Source Output Conductance d Common Source Output Susceptance d Common Source Forward Transconductance d Common-Source Power Gain d Noise Figure Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. ...

Page 4

... Vishay Siliconix TYPICAL CHARACTERISTICS (T Output Characteristics −2 V GS(off 0.2 0.4 0.6 V − Drain-Source Voltage (V) DS Transfer Characteristics −2 V GS(off −55_C A 25_C 6 125_C −0.4 −0.8 −1.2 V − Gate-Source Voltage (V) GS Transconductance vs. Gate-Source Voltage −2 V GS(off −55_C A 6 25_C 4 125_C −0.4 −0.8 − ...

Page 5

... Frequency (MHz) Document Number: 70242 S-50147—Rev. H, 24-Jan-05 = 25_C UNLESS OTHERWISE NOTED) A 100 0.1 3 2.4 1.8 1.2 0.6 0 −16 −20 0 100 0.1 100 500 1000 2N4416/2N4416A/SST4416 Vishay Siliconix Circuit Voltage Gain vs. Drain Current Assume −2 V GS(off) − − Drain Current (mA Common-Source Reverse Feedback Capacitance vs ...

Page 6

... Vishay Siliconix TYPICAL CHARACTERISTICS (T Reverse Admittance 25_C Common Source 1 0.1 0.01 100 200 f − Frequency (MHz) Gate Leakage Current 100 0 125_C 100 0 25_C 0 − Drain-Gate Voltage (V) DG Equivalent Input Noise Voltage vs. Frequency 100 − Frequency (Hz) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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