IXGR40N60C2 IXYS SEMICONDUCTOR, IXGR40N60C2 Datasheet - Page 6

• Manufacturer Part Number: IXGR40N60C2
• Description: IGBT, ISOPLUS247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXGR40N60C2

• Transistor Type: IGBT
• Dc Collector Current: 56A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Max: 170W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Power Dissipation Pd: 170W
• Rohs Compliant: Yes

Fig. 14. Forward current I
Fig. 17. Dynamic parameters Q
Z
Fig. 20. Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions, and dimensions.
I
0.001
F
K
thJC
0.01
K/W
f
2.0
1.5
1.0
0.5
0.0
0.1
A
0.00001
60
50
40
30
20
10
0.001
0
1
0.01
0
0
0.1
0.0001
T
1
T
VJ
VJ
versus T
=100°C
=150°C
40
1
I
RM
Q
r
VJ
0.0001
80
2
0.001
T
VJ
F
T
V
120
VJ
versus V
F
=25°C
3
°C
r
, I
0.001
V
160
RM
F
Time - Seconds
t
0.01
Q
rr
1000
Fig. 15. Reverse recovery charge Q
Fig. 18. Recovery time t
r
800
600
400
200
nC
90
80
70
60
ns
0
100
0.01
0
T
V
VJ
R
= 100°C
= 300V
200
versus -di
I
I
I
F
F
F
400
= 60A
= 30A
= 15A
0.1
I
I
I
0.1
F
F
F
F
/dt
= 60A
= 30A
= 15A
-di
600
F
-di
/dt
T
V
VJ
t
F
R
rr
/dt
= 100°C
= 300V
versus -di
A/μs
s
800
A/μs
DSEP 29-06
1000
1000
1
1
F
/dt
r
I
V
RM
FR
Fig. 16. Peak reverse current I
30
25
20
15
10
20
15
10
Fig. 19. Peak forward voltage V
A
5
0
V
5
0
0
0
T
I
t
T
V
F
fr
VJ
VJ
R
= 100°C
= 30A
= 100°C
= 300V
200
200
versus -di
t
fr
IXGR 40N60C2D1
versus di
I
I
I
F
F
F
= 60A
= 30A
= 15A
400
400
IXGR 40N60C2
V
FR
F
600
600
F
/dt
/dt
di
-di
F
/dt
F
/dt
A/μs
A/μs
800
800
1000
1000
RM
FR
1.00
0.75
0.50
0.25
0.00
μs
and
t
fr