IXDR30N120 IXYS SEMICONDUCTOR, IXDR30N120 Datasheet - Page 4

• Manufacturer Part Number: IXDR30N120
• Description: IGBT TRANSISTOR
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXDR30N120

• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 2.4V
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor Type: IGBT
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions
E
E
I
CM
on
on
14
12
mJ
10
60
50
40
30
20
10
12
mJ
10
A
8
6
4
2
0
8
6
4
2
0
0
0
0
0
Fig. 7 Typ. turn on energy and switching
Fig. 9 Typ. turn on energy and switching
Fig. 11 Reverse biased safe operating area
V
V
I
T
C
CE
GE
J
= 125°C
= 25A
t
= 600V
200
E
= ±15V
d(on)
on
40
t
10
r
times versus collector current
times versus gate resistor
RBSOA
400
80
20
R
T
V
J
CEK
G
600
= 125°C
= 47Ω
< V
120
CES
30
800 1000 1200
160
R
I
G
C
40
V
V
R
T
CE
GE
J
200
V
G
CE
= 125°C
= 600V
= 47Ω
= ±15V
E
t
50
d(on)
on
Ω
V
t
A
240
r
140
120
100
80
60
40
20
0
240
180
120
60
0
ns
ns
t
t
Z
E
E
0.0001
thJC
off
off
0.001
0.01
K/W
0.1
mJ
0.00001 0.0001
mJ
10
6
5
4
3
2
1
0
5
4
3
2
1
0
1
0
0
Fig. 8 Typ. turn off energy and switching
Fig.10 Typ. turn off energy and switching
Fig. 12 Typ. transient thermal impedance
V
V
I
T
C
CE
GE
J
= 125°C
= 25A
= 600V
= ±15V
40
10
times versus collector current
times versus gate resistor
single pulse
80
20
0.001
120
30
IXDR 30N120 D1
IXDR 30N120
0.01
R
160
G
I
t
C
40
d(off)
t
V
V
R
T
0.1
CE
GE
J
G
200
= 125°C
= 600V
= 47Ω
= ±15V
E
IXDR30N120
50
off
diode
Ω
IGBT
t
E
s
d(off)
t
off
f
A
t
240
f
1
600
500
400
300
200
100
0
ns
1500
1200
900
600
300
0
ns
4 - 4
t
t