IXDR30N120 IXYS SEMICONDUCTOR, IXDR30N120 Datasheet - Page 3

• Manufacturer Part Number: IXDR30N120
• Description: IGBT TRANSISTOR
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXDR30N120

• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 2.4V
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor Type: IGBT
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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IXYS reserves the right to change limits, test conditions and dimensions
I
I
V
C
C
GE
60
50
40
30
20
10
60
50
40
30
20
10
20
15
10
A
A
V
0
0
5
0
0.0
5
0
Fig. 1
Fig. 3
Fig. 5
T
V
I
V
T
C
J
CE
CE
J
= 25°C
= 25°C
= 600V
= 25A
20
= 20V
0.5
6
Typ. output characteristics
Typ. transfer characteristics
Typ. turn on gate charge
40
1.0
7
60
1.5
8
80
2.0
9
100 120 140
V
V
CE
GE
2.5
10
Q
G
V
GE
3.0
11
=17V
13V
11V
15V
9V
V
V
nC
I
I
F
I
C
RM
A
60
A
50
40
30
20
10
80
70
60
50
40
30
20
10
60
40
20
A
0
0
0
0.0
0
Fig. 2
Fig. 4
Fig. 6
0
T
J
= 125°C
0.5
200
Typ. output characteristics
Typ. forward characteristics of
free wheeling diode
Typ. turn off characteristics of
1.0
free wheeling diode
I
RM
1
t
rr
1.5
400
2.0
2
IXDR 30N120 D1
IXDR 30N120
T
J
600
= 125°C
2.5
-di/dt
V
V
CE
F
T
V
I
3.0
F
3
J
R
= 125°C
= 30A
800
= 600V
A/μs
T
IXDH/..R30N120
J
V
3.5
= 25°C
GE
V
=17V
15V
11V
13V
9V
V
1000
4
300
200
100
0
ns
3 - 4
t
rr