GT15Q102 Toshiba, GT15Q102 Datasheet - Page 4

• Manufacturer Part Number: GT15Q102
• Description: IGBT, 1200V, TO-3P(N)
• Manufacturer: Toshiba

Specifications of GT15Q102

• Transistor Type: IGBT
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Max: 170W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 15A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-3PN
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Power Dissipation Pd: 170W
• Rohs Compliant: Yes
• Lead Free Status / Rohs Status: Not Compliant

0.05
0.03
0.01
0.05
0.5
0.3
0.1
0.5
0.3
0.1
0.5
0.3
0.1
10
1
5
3
1
3
1
3
3
3
Common emitter
V CC
V GG
I C
Common emitter
V CC
V GG
I C
Common emitter
V CC
V GG
I C
Note2
5
5
5
15 A
15 A
15 A
: Tc
: Tc
: Tc
: Tc
: Tc
: Tc
600 V
600 V
Switching loss E
600 V
15 V
15 V
15 V
Switching time t
Switching time t
10
10
10
Gate resistance R
Gate resistance R
Gate resistance R
25°C
125°C
25°C
125°C
25°C
125°C
30
30
30
50
50
50
on
on
off
, E
G
G
G
, t
, t
100
100
100
r
f
off
– R
– R
( )
( )
( )
– R
G
G
G
t on
t off
t r
t f
E on
E off
300 500
300
300 500
4
0.05
0.03
0.01
0.05
0.3
0.1
0.5
0.3
0.1
0.5
0.5
0.3
0.1
10
1
5
3
1
3
1
0
0
0
Common emitter
V CC
V GG
R G
Common emitter
V CC
V GG
R G
Note2
Common emitter
V CC
V GG
R G
56
56
: Tc
: Tc
: Tc
: Tc
56
600 V
600 V
Switching loss E
600 V
: Tc
: Tc
15 V
15 V
15 V
Switching time t
Switching time t
5
5
5
Collector current I
Collector current I
Collector current I
25°C
125°C
25°C
125°C
25°C
125°C
E on
10
10
10
E off
on
on
off
, E
C
C
C
, t
, t
r
f
off
(A)
(A)
(A)
– I
– I
15
15
15
– I
C
C
C
t on
t r
t off
GT15Q102
t f
2002-01-18
20
20
20