GT15Q102 Toshiba, GT15Q102 Datasheet

IGBT, 1200V, TO-3P(N)

GT15Q102

Manufacturer Part Number
GT15Q102
Description
IGBT, 1200V, TO-3P(N)
Manufacturer
Toshiba
Datasheets

Specifications of GT15Q102

Transistor Type
IGBT
Dc Collector Current
15A
Collector Emitter Voltage Vces
2.7V
Power Dissipation Max
170W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Transistor
RoHS Compliant
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
15A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-3PN
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Power Dissipation Pd
170W
Rohs Compliant
Yes
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
GT15Q102
Manufacturer:
ROHM
Quantity:
10 000
High Power Switching Applications
Absolute Maximum Ratings
Marking
Third-generation IGBT
Enhancement mode type
High speed: t
Low saturation voltage: V
Collector-emitter voltage
Gate-emitter voltage
Collector current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Characteristic
GT15Q102
TOSHIBA
f
= 0.32 μs (max)
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
1 ms
CE (sat)
DC
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
= 2.7 V (max)
(Ta = 25°C)
Symbol
V
V
GT15Q102
T
I
P
GES
CES
I
CP
T
stg
C
C
j
−55~150
Rating
1200
±20
170
150
15
30
1
Unit
°C
°C
W
V
V
A
Weight: 4.6 g
JEDEC
JEITA
TOSHIBA
2-16C1C
GT15Q102
2006-11-01
Unit: mm

Related parts for GT15Q102

GT15Q102 Summary of contents

Page 1

... Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. GT15Q102 = 2.7 V (max) (Ta = 25°C) Symbol Rating Unit V 1200 V CES ± GES 170 150 °C j −55~150 T °C stg 1 GT15Q102 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-16C1C Weight: 4.6 g 2006-11-01 ...

Page 2

... Inductive Load r = 600 ± Ω off ⎯ ( (off) 10% 10 GT15Q102 Min Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 4.0 ⎯ 2.1 ⎯ 850 ⎯ 0.05 ⎯ 0.12 ⎯ 0.16 (Note1) ⎯ 0.56 ⎯ ⎯ 10% 90% 90% 10% 10 (on off on 2006-11-01 Max Unit ± ...

Page 3

... Tc = 25° Gate-emitter voltage V ( – Common emitter 125°C − Gate-emitter voltage V ( Common emitter Tc = −40° Gate-emitter voltage V 20 Common emitter Tc = 125° Gate-emitter voltage V 4 Common emitter −60 −20 20 Case temperature Tc (°C) 3 GT15Q102 V – ( – ( – (sat 100 140 2006-11-01 ...

Page 4

... Tc = 125°C t off 0.5 0 0.1 0.05 0 300 Switching loss Common emitter 600 ± Ω 25° 125° Note2 E off 1 0.5 0.3 0.1 300 500 0 4 GT15Q102 Switching time – Collector current I (A) C Switching time – I off off Collector current I (A) ...

Page 5

... 200 V C oes 200 C res 0 300 1000 0 ( μ 0 < = 125°C 0 ± Ω 0.1 1000 3000 1 3 (V) Collector-emitter voltage GT15Q102 – 400 120 160 200 Gate charge Q (nC) G Reverse bias SOA 10 30 100 300 1000 3000 (V) CE 2006-11-01 ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 GT15Q102 20070701-EN 2006-11-01 ...

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