IXA20IF1200HB IXYS SEMICONDUCTOR, IXA20IF1200HB Datasheet - Page 6

• Manufacturer Part Number: IXA20IF1200HB
• Description: IGBT,1200V,38A,TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXA20IF1200HB

• Transistor Type: IGBT
• Dc Collector Current: 38A
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Max: 165W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Power Dissipation Pd: 165W

IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
I
[A]
[A]
[mJ]
E
RR
I
F
rec
1.4
1.2
1.0
0.8
0.6
0.4
0.2
40
30
20
10
35
30
25
20
15
10
0
5
0
200
200
0.0
Fig. 11 Typ. recovery energy E
Fig. 9 Typ. peak reverse current I
Fig. 7 Typ. Forward current versus V
T
V
T
V
VJ
VJ
R
R
0.5
= 125°C
= 125°C
= 600 V
300
= 600 V
300
T
T
VJ
VJ
= 125°C
= 25°C
1.0
400
400
di
di
F
F
V
/dt [A/µs]
/dt [A/µs]
F
1.5
[V]
500
500
2.0
rec
versus di/dt
RM
600
600
vs. di/dt
2.5
F
40 A
20 A
10 A
40 A
20 A
10 A
700
700
3.0
Data according to IEC 60747and per diode unless otherwise specified
[K/W]
Z
[ns]
t
thJC
rr
[µC]
Q
rr
700
600
500
400
300
200
100
0.1
0.001
5
4
3
2
1
0
1
200
200
Fig. 8 Typ. reverse recov.charge Q
Fig. 10 Typ. recovery time t
Fig. 12 Typ. transient thermal impedance
300
300
0.01
400
400
di
di
IXA20IF1200HB
1 0.15 0.0006 0.231 0.0005
2 0.28 0.2
3 0.16 0.006
4 0.17 0.05
F
F
Inverter-IGBT
/dt [A/µs]
t
/dt [A/µs]
p
0.1
R
[s]
i
500
500
rr
versus di/dt
t
i
T
V
T
V
Inverter-FRD
VJ
R
VJ
R
0.212 0.004
0.19
0.267 0.15
1
= 125°C
= 125°C
= 600 V
600
600
= 600 V
Diode
rr
IGBT
R
vs. di/dt
40 A
20 A
10 A
40 A
20 A
10 A
i
0.02
20100102a
t
i
700
700
10