IXA20IF1200HB IXYS SEMICONDUCTOR, IXA20IF1200HB Datasheet - Page 3

• Manufacturer Part Number: IXA20IF1200HB
• Description: IGBT,1200V,38A,TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXA20IF1200HB

• Transistor Type: IGBT
• Dc Collector Current: 38A
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Max: 165W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Power Dissipation Pd: 165W

Symbol
T
T
R
Weight
M
F
IXYS reserves the right to change limits, conditions and dimensions.
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C
VJ
stg
Package TO-247
thCH
D
Marking on product
Assembly Code
DateCode
Logo
Definition
Virtual junction temperature
Storage temperature
Thermal resistance case to heatsink
Mounting torque
Mounting force with clip
Product Marking
XXXXXX
YYWW
abcdef
Standard
Ordering
IXA 20 IF 1200 HB
Part Name
IXA20I1200PB
Similar Part
Conditions
Marking on Product
IXA20IF1200HB
TO-220AB (3)
Data according to IEC 60747and per diode unless otherwise specified
Package
Delivering Mode
Voltage class
1200
Tube
Part number
1200
Base Qty Code Key
HB
20
IF
X
A
I
=
=
=
=
=
=
=
30
IGBT
XPT IGBT
Gen 1 / std
Current Rating [A]
Copack
Reverse Voltage [V]
TO-247AD (3)
IXA20IF1200HB
508460
min.
-55
-55
0.8
20
Ratings
typ.
0.25
6
max.
150
150
120
1.2
20100102a
Unit
K/W
Nm
°C
°C
N
g