IXA20I1200PB IXYS SEMICONDUCTOR, IXA20I1200PB Datasheet - Page 4

• Manufacturer Part Number: IXA20I1200PB
• Description: IGBT,1200V,33A,TO-220
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXA20I1200PB

• Transistor Type: IGBT
• Dc Collector Current: 33A
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Max: 130W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220
• Rohs Compliant: Yes
• Power Dissipation Pd: 130W

IXYS reserves the right to change limits, conditions and dimensions.
© 2009 IXYS all rights reserved
[A]
[A]
[mJ]
I
I
C
C
E
30
25
20
15
10
30
25
20
15
10
5
0
5
0
4
3
2
1
0
0
5
Fig. 3 Typ. tranfer characteristics
0
Fig. 5 Typ. switching energy vs. collector current
Fig. 1 Typ. output characteristics
V
R
V
V
T
GE
VJ
CE
GE
G
T
6
= 15 V
VJ
=
5
= 125°C
= 600 V
= ±15 V
= 125°C
56
7
10
T
1
VJ
= 25°C
8
V
T
15
V
VJ
CE
I
GE
C
= 25°C
9
[V]
[A]
[V]
20
2
10 11 12 13
T
VJ
= 125°C
25
30
3
E
E
off
on
35
Data according to IEC 60747and per diode unless otherwise specified
[mJ]
V
[V]
E
[A]
GE
I
C
2.8
2.4
2.0
1.6
1.2
30
25
20
15
10
20
15
10
Fig. 6 Typ. switching energy vs. gate resistance
5
0
5
0
40
0
0
Fig. 2 Typ. output characteristics
Fig. 4 Typ. turn-on gate charge
T
VJ
I
V
V
T
I
V
C
E
E
C
VJ
CE
GE
CE
=
= 125°C
off
on
60
10
= 125°C
= 600 V
= ±15 V
= 15 A
= 600 V
1
15 A
V
GE
80
= 15 V
20
17 V
19 V
IXA20I1200PB
2
R
Q
100
G
V
30
G
CE
[ ]
[nC]
[V]
3
120
40
13 V
preliminary
140
4
50
20090409
11 V
9 V
160
60
5