IXA20I1200PB IXYS SEMICONDUCTOR, IXA20I1200PB Datasheet - Page 3

• Manufacturer Part Number: IXA20I1200PB
• Description: IGBT,1200V,33A,TO-220
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXA20I1200PB

• Transistor Type: IGBT
• Dc Collector Current: 33A
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Max: 130W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220
• Rohs Compliant: Yes
• Power Dissipation Pd: 130W

Symbol
T
T
R
Weight
M
F
IXYS reserves the right to change limits, conditions and dimensions.
© 2009 IXYS all rights reserved
C
VJ
stg
Package TO-220
thCH
D
Marking on product
Assembly Code
DateCode
Logo
Definition
Virtual junction temperature
Storage temperature
Thermal resistance case to heatsink
Mounting torque
Mounting force with clip
Product Marking
XXXXXX
abcdef
G
J
Standard
Ordering
YYWW
C
L
K
IXA 20 I 1200 PB
Part Name
M
N
Conditions
R
Q
Marking on Product
IXA20I1200PB
Data according to IEC 60747and per diode unless otherwise specified
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Min.
12.70 13.97
14.73 16.00
9.91
3.54
5.85
2.54
1.15
2.79
0.64
2.54
4.32
1.14
0.35
2.29
Millimeter
Delivering Mode
Max.
10.66
4.08
6.85
3.18
1.65
5.84
1.01
BSC
4.82
1.39
0.56
2.79
Part number
1200
Base Qty Code Key
PB
20
X
A
I
I
Min.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
=
=
=
=
=
=
=
Inches
IGBT
XPT IGBT
Gen 1 / std
Current Rating [A]
Single IGBT
Reverse Voltage [V]
TO-220AB (3)
IXA20I1200PB
min.
Max.
-55
-55
0.4
20
Ratings
typ.
0.50
2
max.
preliminary
150
150
0.6
60
20090409
Unit
K/W
Nm
°C
°C
N
g