6MBI35S-120-50 FUJI ELECTRIC, 6MBI35S-120-50 Datasheet - Page 2

• Manufacturer Part Number: 6MBI35S-120-50
• Description: IGBT, 6 PACK MOD, 1200V, 35A, M623
• Manufacturer: FUJI ELECTRIC

Specifications of 6MBI35S-120-50

• Module Configuration: Six
• Transistor Polarity: N Channel
• Dc Collector Current: 35A
• Collector Emitter Voltage Vces: 2.65V
• Power Dissipation Max: 240W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6MBI35S-120
Characteristics
10000
1000
100
80
60
40
20
80
60
40
20
0
0
0
0
0
Capacitance vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
5
1
1
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
VGE=0V, f= 1MHz, Tj= 25
10
VGE=15V (typ.)
Tj= 25
2
2
15
o
VGE= 20V
C (typ.)
20
Tj= 25
3
3
o
15V
C
o
25
C
12V
Tj= 125
4
4
30
Coes
Cies
Cres
o
C
10V
8V
35
5
5
1000
800
600
400
200
80
60
40
20
10
0
8
6
4
2
0
0
0
5
0
Collector-Emitter voltage vs. Gate-Emitter voltage
Collector current vs. Collector-Emitter voltage
1
100
Collector - Emitter voltage : VCE [ V ]
10
Gate - Emitter voltage : VGE [ V ]
Vcc=600V, Ic=35A, Tj= 25
Dynamic Gate charge (typ.)
Gate charge : Qg [ nC ]
Tj= 125
Tj= 25
2
200
o
15
o
C (typ.)
C (typ.)
3
VGE= 20V
IGBT Modules
o
C
300
20
Ic= 35A
Ic= 17.5A
Ic= 70A
4
15V
12V
10V
8V
400
25
5
25
20
15
10
5
0