6MBI35S-120L Fuji Electric, 6MBI35S-120L Datasheet
6MBI35S-120L
Manufacturer Part Number
6MBI35S-120L
Description
IGBT(1200V/6x35A)
Manufacturer
Fuji Electric
Datasheet
1.6MBI35S-120L.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
6MBI35S-120L
Manufacturer:
FUJI
Quantity:
1 000
n n Maximum Ratings and Characteristics
•
•
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
•
Thermal Resistance
IGBT MODULE ( S-Series )
n n Features
• NPT-Technologie
• Solderable Package
• Square SC SOA at 10 x I
• High Short Circuit Withstand-Capability
• Small Temperature Dependence of the Turn-Off
• Low Losses And Soft Switching
n n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector
Current (25°C / 80°C)
Max. Power Dissipation
Operating Temperature
Storage Temperature
Isolation Voltage
Screw Torque
Absolute Maximum Ratings
Electrical Characteristics
Thermal Characteristics
Switching Loss
Items
Items
Items
Continuous
1ms
Continuous
1ms
A.C. 1min.
C
( at T
6MBI 35S-120L
( T
j
=25°C )
c
=25°C
Note: *1:Recommendable Value; 2.5
Mounting *1
-I
-I
)
Symbols
V
V
I
I
P
T
T
V
I
I
V
V
C
C
C
t
t
t
t
V
t
Symbols
Symbols
C
C PULSE
C
C PULSE
CES
GES
ON
r
OFF
f
rr
j
stg
CES
GES
C
is
GE(th)
CE(sat)
F
ies
oes
res
R
R
R
th(c-f)
th(j-c)
th(j-c)
-40
100 / 70
100 / 70
Ratings
50 / 35
50 / 35
1200
+150
2500
IGBT
Diode
With Thermal Compound
280
3.5
20
V
V
V
V
V
V
f=1MHz
V
I
V
R
I
I
n n Outline Drawing
C
F
F
+125
GE
CE
GE
GE
GE
CE
CC
=35A
GE
G
=35A V
=35A
3.5 Nm (M5)
=33
=0V V
=0V V
=20V I
=15V I
=0V
=10V
=600V
= 15V
Test Conditions
Test Conditions
GE
GE
CE
C
C
Units
=0V
=35mA
=35A
Nm
°C
°C
W
=1200V
= 20V
V
V
V
A
n n Equivalent Circuit
Min.
Min.
6.0
Typ.
Typ.
0.60
0.40
0.45
0.10
0.05
2.1
4200
6-Pack IGBT
0.44
0.80
1200V
6x35A
Max.
Max.
200
350
1.0
9.0
1.2
0.6
1.0
0.3
3.3
Units
Units
°C/W
mA
µA
pF
ns
V
V
V
µs
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6MBI35S-120L Summary of contents
Page 1
IGBT MODULE ( S-Series ) n n Features • NPT-Technologie • Solderable Package • Square SC SOA • High Short Circuit Withstand-Capability • Small Temperature Dependence of the Turn-Off Switching Loss • Low ...
Page 2
For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-233-1589 972-233-0481 Fax http://www.collmer.com ...