2MBI300U2B-060-50 FUJI ELECTRIC, 2MBI300U2B-060-50 Datasheet - Page 9

• Manufacturer Part Number: 2MBI300U2B-060-50
• Description: DUAL IGBT MODULE 300A 600V NPT
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI300U2B-060-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 300A
• Collector Emitter Voltage Vces: 2.45V
• Power Dissipation Max: 1kW
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor: RoHS Compliant

750
600
450
300
150
750
600
450
300
150
100.0
10.0
0
0
1.0
0.1
0
0
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Capacitance vs. Collector-Emitter voltage (typ.)
0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
1
1
VGE=20V 15V
10
VGE=15V / chip
Tj= 25
2
Coes
2
Cres
Tj=25
12V
/ chip
3
Cies
20
Tj=125
3
4
10V
8V
30
5
4
750
600
450
300
150
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
10
Collector current vs. Collector-Emitter voltage (typ.)
8
6
4
2
0
0
5
0
0
MS5F 5617
Vcc=300V Ic=300A Tj= 25
Gate - Emitter voltage : VGE [ V ]
Collector-Emitter voltage : VCE [V]
Dynamic Gate charge (typ.)
1
10
Gate charge : Qg [ nC ]
Tj= 125
Tj=25 C / chip
500
VGE
VGE=20V 15V
VCE
2
15
/ chip
3
1000
12V
20
Ic=600A
Ic=300A
Ic=150A
H04-004-03a
9
4
10V
13
8V
1500
25
a
5