2MBI300U2B-060-50 FUJI ELECTRIC, 2MBI300U2B-060-50 Datasheet - Page 10

• Manufacturer Part Number: 2MBI300U2B-060-50
• Description: DUAL IGBT MODULE 300A 600V NPT
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI300U2B-060-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 300A
• Collector Emitter Voltage Vces: 2.45V
• Power Dissipation Max: 1kW
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor: RoHS Compliant

10000
10000
1000
1000
40
30
20
10
100
100
0
10
10
1.0
1.0
0
Vcc=300V, VGE=±15V, Rg=9.1 , Tj= 25
Vcc=300V, Ic=300A, VGE=±15V, Tj= 125
Vcc=300V, Ic=300A, VGE=±15V, Tj= 25
Switching time vs. Collector current (typ.)
Switching time vs. Gate resistance (typ.)
Switching loss vs. Gate resistance (typ.)
Gate resistance : Rg [
toff
ton
Collector current : Ic [ A ]
Gate resistance : Rg [
150
10.0
10.0
300
]
]
450
tr
tf
tr
tf
ton
toff
Eon
Eoff
Err
100.0
100.0
600
10000
750
600
450
300
150
1000
100
25
20
15
10
0
10
5
0
0
+VGE=15V,-VGE 15V, RG 9.1
0
MS5F 5617
0
Vcc=300V, VGE=±15V, Rg=9.1 , Tj=125
Switching time vs. Collector current (typ.)
Switching loss vs. Collector current (typ.)
Reverse bias safe operating area (max.)
Collector - Emitter voltage : VCE [ V ]
Vcc=300V, VGE=±15V, Rg=9.1
Collector current : Ic [ A ]
200
150
150
Collector current : Ic [ A ]
400
300
300
600
450
450
,Tj 125
10
H04-004-03a
Eoff(125 )
Eon(125 )
Eoff(25 )
ton
toff
tr
tf
Eon(25 )
Err(125 )
Err(25 )
13
800
600
600
a