2MBI150U2A-060-50 FUJI ELECTRIC, 2MBI150U2A-060-50 Datasheet - Page 3

• Manufacturer Part Number: 2MBI150U2A-060-50
• Description: DUAL IGBT MODULE 150A 600V NPT
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI150U2A-060-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 150A
• Collector Emitter Voltage Vces: 2.35V
• Power Dissipation Max: 500W
• Collector Emitter Voltage V(br)ceo: 600V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2MBI150U2A-060
10000
10000
1000
1000
20
15
10
100
100
5
0
10
10
1.0
1.0
0
Vcc=300V, Ic=150A, VGE=±15V, Tj= 125°C
Vcc=300V, VGE=±15V, Rg=24 , Tj= 25°C
Vcc=300V, Ic=150A, VGE=±15V, Tj= 25°C
Switching time vs. Collector current (typ.)
Switching time vs. Gate resistance (typ.)
Switching loss vs. Gate resistance (typ.)
Gate resistance : Rg [ Ω ]
toff
ton
Collector current : Ic [ A ]
Gate resistance : Rg [ Ω ]
100
Eoff
Eon
Err
10.0
10.0
ton
toff
tf
200
tr
tr
tf
100.0
100.0
300
10000
400
300
200
100
1000
100
12
0
10
8
4
0
+VGE=15V,-VGE <= 15V, RG >= 24 ,Tj <= 125°C
0
0
0
Vcc=300V, VGE=±15V, Rg=24 , Tj=125°C
Switching time vs. Collector current (typ.)
Switching loss vs. Collector current (typ.)
Reverse bias safe operating area (max.)
Collector - Emitter voltage : VCE [ V ]
Vcc=300V, VGE=±15V, Rg=24
Collector current : Ic [ A ]
200
Collector current : Ic [ A ]
100
100
400
200
200
600
IGBT Module
Eon(25°C)
Eoff(125°C)
Eoff(25°C)
Eon(125°C)
Err(125°C)
ton
toff
tr
tf
Err(25°C)
800
300
300