2MBI150U2A-060-50 FUJI ELECTRIC, 2MBI150U2A-060-50 Datasheet - Page 2

• Manufacturer Part Number: 2MBI150U2A-060-50
• Description: DUAL IGBT MODULE 150A 600V NPT
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI150U2A-060-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 150A
• Collector Emitter Voltage Vces: 2.35V
• Power Dissipation Max: 500W
• Collector Emitter Voltage V(br)ceo: 600V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2MBI150U2A-060
Characteristics (Representative)
400
300
200
100
400
300
200
100
100.0
10.0
0
0
1.0
0.1
0
0
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
0
Capacitance vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage : VCE [V]
1
1
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Tj=25°C
10
VGE=15V / chip
VGE=20V15V
Tj= 25°C / chip
2
2
Tj=125°C
Coes
12V
Cres
3
3
20
Cies
4
4
10V
8V
30
5
5
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
400
300
200
100
10
Collector current vs. Collector-Emitter voltage (typ.)
8
6
4
2
0
0
0
5
0
Vcc=300V, Ic=150A, Tj= 25°C
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Collector-Emitter voltage : VCE [V]
1
200
10
Tj= 125°C / chip
Tj=25°C / chip
Gate charge : Qg [ nC ]
VGE=20V
2
400
15
VCE
3
15V
12V
600
20
VGE
IGBT Module
Ic=300A
Ic=150A
Ic= 75A
4
10V
8V
800
25
5