FS50R12W2T4_B11 Infineon Technologies, FS50R12W2T4_B11 Datasheet - Page 8

• Manufacturer Part Number: FS50R12W2T4_B11
• Description: IGBT Module
• Manufacturer: Infineon Technologies

Specifications of FS50R12W2T4_B11

• Module Configuration: Six
• Transistor Polarity: N Channel
• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 335W
• No. Of Pins: 18
• Collector Emitter Saturation Voltage Vce(sat): 1.85V
• Rohs Compliant: Yes
• Ic (max): 50.0 A
• Vce(sat) (typ): 1.85 V
• Configuration: sixpack
• Technology: IGBT4
• Housing: EasyPACK 2B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Schaltplan / circuit diagram
Gehäuseabmessungen / package outlines
FS50R12W2T4_B11
8
Infineon
Vorläufige Daten
preliminary data