FP35R12W2T4 Infineon Technologies, FP35R12W2T4 Datasheet - Page 8

• Manufacturer Part Number: FP35R12W2T4
• Description: IGBT Module
• Manufacturer: Infineon Technologies

Specifications of FP35R12W2T4

• Transistor Polarity: N Channel
• Dc Collector Current: 35A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 215W
• No. Of Pins: 23
• Collector Emitter Saturation Voltage Vce(sat): 1.85V
• Channel Type: N
• Configuration: Hex
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Rohs Compliant: Yes
• Packages: AG-EASY2B-1
• Ic (max): 35.0 A
• Vce(sat) (typ): 1.85 V
• Technology: IGBT4
• Housing: EasyPIM™ 2B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
14
12
10
77
70
63
56
49
42
35
28
21
14
8
6
4
2
0
7
0
0
0
200
20
400
40
600
60
800
80
FP35R12W2T4
1000 1200 1400
100
120
140
8
0,01
0,1
10
70
65
60
55
50
45
40
35
30
25
20
15
10
1
0,001
5
0
0,0
0,5
0,01
1,0
τ
0,1
Vorläufige Daten
preliminary data
1,5
1
2,0
2,5
10