FP10R12W1T4_B3 Infineon Technologies, FP10R12W1T4_B3 Datasheet
FP10R12W1T4_B3
Manufacturer Part Number
FP10R12W1T4_B3
Description
IGBT Module
Manufacturer
Infineon Technologies
Datasheet
1.FP10R12W1T4_B3.pdf
(10 pages)
Specifications of FP10R12W1T4_B3
Transistor Polarity
N Channel
Dc Collector Current
10A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
105W
No. Of Pins
20
Collector Emitter Saturation Voltage Vce(sat)
1.85V
Channel Type
N
Configuration
Hex
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Rohs Compliant
Yes
Packages
AG-EASY1B-1
Ic (max)
10.0 A
Vce(sat) (typ)
1.85 V
Technology
IGBT4
Housing
EasyPIM 1B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FP10R12W1T4_B3FP10R12W1T4-B3
Manufacturer:
EUPEC/Infineon
Quantity:
1 000
Part Number:
FP10R12W1T4_B3FP10R12W1T4-B3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
FP10R12W1T4_B3FP10R12W1T4-B3
Quantity:
94
Part Number:
FP10R12W1T4_B3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
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FP10R12W1T4_B3 Summary of contents
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