FF1200R17KP4_B2 Infineon Technologies, FF1200R17KP4_B2 Datasheet - Page 8

• Manufacturer Part Number: FF1200R17KP4_B2
• Description: IGBT Module
• Manufacturer: Infineon Technologies

Specifications of FF1200R17KP4_B2

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 1200A
• Collector Emitter Voltage Vces: 1.7kV
• Power Dissipation Pd: 6.25kW
• No. Of Pins: 10
• Collector Emitter Saturation Voltage Vce(sat): 1.9V
• Rohs Compliant: Yes
• Ic (max): 1,200.0 A
• Vce(sat) (typ): 1.9 V
• Configuration: dual
• Technology: IGBT4
• Housing: IHM 130 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Schaltplan / circuit diagram
Gehäuseabmessungen / package outlines
FF1200R17KP4_B2
8
Vorläufige Daten
preliminary data