IXZ308N120 IXYS RF, IXZ308N120 Datasheet - Page 2

• Manufacturer Part Number: IXZ308N120
• Description: MOSFET, N, RF, DE375
• Manufacturer: IXYS RF

Specifications of IXZ308N120

• Drain Source Voltage Vds: 1.2kV
• Continuous Drain Current Id: 8A
• Power Dissipation Max: 880W
• Operating Temperature Range: -55°C To +175°C
• Rf Transistor Case: DE375
• No. Of Pins: 6
• Transistor Type: RF MOSFET
• Package / Case: DE-375
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
5,034,796
5,381,025
6,731,002
Symbol
R
C
C
C
C
T
T
T
T
Source-Drain Diode
Symbol
I
I
V
T
S
SM
d(on)
on
d(off)
off
rr
SD
G
iss
oss
rss
stray
4,860,072
5,049,961
5,640,045
Test Conditions
V
f = 1 MHz
Back Metal to any Pin
V
I
R
Test Conditions
V
Repetitive; pulse width limited by
T
I
300µs, duty cycle ≤2%
D
F=
JM
GS
GS
GS
G
= 0.5 I
I
s,
= 1 Ω (External)
= 0 V, V
= 15 V, V
= 0 V
V
GS
=0 V, Pulse test, t ≤
DM
DS
DS
= 0.8 V
= 0.8 V
4,881,106
5,063,307
6,404,065
DSS(max)
DSS
,
Characteristic Values
(
Characteristic Values
(
T
T
J
J
4,891,686
5,187,117
6,583,505
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
min.
min.
1960
TBD
typ.
typ.
9.2
59
33
4,931,844
5,237,481
6,710,463
4
5
4
6
max.
max.
1.5
48
1
8
Z-MOS RF Power MOSFET
pF
pF
pF
pF
ns
ns
ns
ns
ns
Ω
Α
A
V
5,017,508
5,486,715
6,727,585
IXZ308N120