IXFT28N50F IXYS RF, IXFT28N50F Datasheet - Page 2

• Manufacturer Part Number: IXFT28N50F
• Description: MOSFET, N, RF, TO-268AA
• Manufacturer: IXYS RF

Specifications of IXFT28N50F

• Drain Source Voltage Vds: 500V
• Continuous Drain Current Id: 28A
• Power Dissipation Max: 315W
• Operating Temperature Range: -55°C To +150°C
• Rf Transistor Case: TO-268
• No. Of Pins: 3
• Transistor Type: RF MOSFET
• Package / Case: TO-268
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
RM
d(on)
d(off)
S
SM
r
f
rr
fs
oss
thJC
thCK
SD
iss
rss
g(on)
gs
gd
RM
Test Conditions
Test Conditions
F
GS
DS
F
S
GS
GS
GS
G
S
GS
D
DS
DS
DS
D25
JM
R
DSS
DSS
J
J
D
D
D25
D25
min.
min.
Characteristic Values
Characteristic Values
4,835,592
4,850,072
typ.
typ.
4,881,106
4,931,844
max.
max.
5,017,508
5,034,796
5,049,961
5,063,307
TO-247 AD Outline
TO-268 Outline
Dim.
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
S
A
A
A
b
b
C
D
E
E
e
H
L
L1
L2
L3
L4
1
2
1
2
2
1
2
1
P
1
2
20.80
15.75
19.81
13.80
15.85
18.70
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
1.15
13.3
2.40
1.20
1.00
3.80
Min.
5,187,117
5,237,481
3
4.7
2.2
2.2
1.0
Millimeter
4.9
2.7
.02
1.9
Millimeter
5.45 BSC
.4
0.25 BSC
.4
IXFH 28N50F
IXFT 28N50F
21.46
16.26
20.32
14.00
16.05
19.10
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
Max.
1.45
13.6
2.70
1.40
1.15
4.10
5.3
2.6
1.4
5.1
2.9
.25
2.1
.65
.8
5,486,715
5,381,025
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
.193
.106
.001
.045
.016
.543
.624
.524
.736
.094
.047
.039
.150
Min.
242 BSC
.75
Inches
Inches
.215 BSC
.010 BSC
Max.
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216
.551
.632
.752
6,306,728B1
.201
.114
.010
.057
.026
.535
.106
.055
.045
.161
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
.83