IXFN24N100F IXYS RF, IXFN24N100F Datasheet - Page 2
![MOSFET, N, RF, SOT-227B](/photos/22/15/221541/99268904-40_sml.jpg)
IXFN24N100F
Manufacturer Part Number
IXFN24N100F
Description
MOSFET, N, RF, SOT-227B
Manufacturer
IXYS RF
Datasheet
1.IXFN24N100F.pdf
(2 pages)
Specifications of IXFN24N100F
Drain Source Voltage Vds
1kV
Continuous Drain Current Id
24A
Power Dissipation Max
600W
Operating Temperature Range
-55°C To +150°C
Rf Transistor Case
SOT-227B
No. Of Pins
4
Transistor Type
RF MOSFET
Package / Case
ISOTOP
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
IXYS reserves the right to change limits, test conditions, and dimensions.
SM
RM
d(on)
d(off)
f
S
r
rr
fs
iss
oss
rss
thJC
thCK
SD
RM
g(on)
gs
gd
Test Conditions
V
Test Conditions
V
Repetitive;
pulse width limited by T
I
Pulse test, t 300 s, duty cycle d 2 %
I
F
F
GS
DS
= I
= I
= 10 V; I
S
S
= 0 V
V
V
R
V
, V
, -di/dt = 100 A/ s, V
GS
GS
GS
G
GS
= 1
= 0 V, V
= 10 V, V
= 10 V, V
= 0 V,
D
= 0.5 • I
(External),
DS
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
D25
, pulse test
JM
R
= 100 V
DSS
DSS
(T
(T
, I
, I
J
D
D
J
= 25 C, unless otherwise specified)
= 25 C, unless otherwise specified)
= 0.5 • I
= 0.5 • I
min.
D25
D25
16
min.
Characteristic Values
Characteristic Values
6600
typ.
typ.
0.05
1.4
760
230
195
100
10
24
22
18
52
11
40
0.21
max.
max.
250
1.5
24
96
K/W
K/W
nC
nC
nC
pF
pF
pF
n s
n s
n s
n s
n s
C
S
A
A
V
A
miniBLOC, SOT-227 B
M4 screws (4x) supplied
IXFN 24N100F