BLA6H0912-500 NXP Semiconductors, BLA6H0912-500 Datasheet - Page 3

• Manufacturer Part Number: BLA6H0912-500
• Description: LDMOS,RF,500W,960M-1215MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLA6H0912-500

• Drain Source Voltage Vds: 100V
• Continuous Drain Current Id: 54A
• Operating Frequency Range: 858MHz To 860MHz
• Rf Transistor Case: SOT-634A
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
6. Characteristics
BLA6H0912-500_4
Product data sheet
6.1 Ruggedness in class-AB operation
Table 6.
T
Table 7.
Mode of operation: pulsed RF; f = 960 MHz to 1215 MHz; t
V
circuit.
The BLA6H0912-500 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: f = 960 MHz,
1030 MHz, 1090 MHz or 1215 MHz. V
δ = 10 %.
Symbol Parameter
V
V
I
I
I
g
R
Symbol
P
V
G
RL
η
P
t
t
DSS
DSX
GSS
r
f
j
DS
fs
D
(BR)DSS
GS(th)
L
DS
droop(pulse)
DS(on)
p
= 25
in
= 50 V; I
°
C unless otherwise specified.
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
DC characteristics
RF characteristics
Dq
Parameter
output power
drain-source voltage
power gain
input return loss
drain efficiency
pulse droop power
rise time
fall time
= 100 mA; T
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 10 May 2010
case
= 25
°
C; unless otherwise specified, in a class-AB production test
DS
Conditions
V
V
V
V
V
V
I
D
= 50 V; I
GS
DS
GS
GS
DS
GS
DS
GS
= 14.18 A
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
LDMOS avionics radar power transistor
GS(th)
GS(th)
Dq
D
DS
D
D
Conditions
P
P
P
P
P
P
P
= 100 mA; P
p
= 2.7 mA
+ 3.75 V;
+ 3.75 V;
DS
= 270 mA
= 405 mA
= 128
L
L
L
L
L
L
L
= 50 V
BLA6H0912-500
= 450 W
= 450 W
= 450 W
= 450 W
= 450 W
= 450 W
= 450 W
= 0 V
μ
s;
δ
= 10 %; RF performance at
L
Min
100
1.3
-
53.5
-
2.50
-
= 450 W; t
Min Typ Max Unit
-
-
16
7
45
-
-
-
© NXP B.V. 2010. All rights reserved.
Typ
-
1.8
-
64
-
3.5
70
450 -
-
17
11
50
0
20
6
p
50
-
-
-
0.3
50
50
= 128 μs;
Max Unit
-
2.2
3.6
-
360 nA
4.55 S
85
3 of 14
W
V
dB
dB
%
dB
ns
ns
V
V
μA
A
mΩ