DE475-501N44A IXYS RF, DE475-501N44A Datasheet
DE475-501N44A
Specifications of DE475-501N44A
Related parts for DE475-501N44A
DE475-501N44A Summary of contents
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... JM ≤ DSS >200 V/ns 1800 730 4.5 0.08 C/W 0.20 C/W Characteristic Values T = 25°C unless otherwise specified J min. typ. max. 500 2.5 ±100 0.11 33 -55 +175 175 -55 +175 300 3 DE475-501N44A RF Power MOSFET V = DSS I = D25 R = DS(on V/ns W GATE W W SG1 ...
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... Characteristic Values ( T = 25°C unless otherwise specified) J min. typ. max. 0.3 5500 , 230 130 162 56 70 Characteristic Values ( T = 25°C unless otherwise specified) J min. typ. max. 44 288 JM 1.5 200 0.6 14 4,891,686 4,931,844 5,017,508 5,187,117 5,237,481 5,486,715 DE475-501N44A RF Power MOSFET Ω µC A ...
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... 475-501N44A Capacitances vs Vds DE475-501N44A RF Power MOSFET Ciss Coss Crss 350 400 450 500 ...
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... D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N) .MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M) .MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M) .ENDS (Preliminary) of the device, Rds is the resistive leakage term. DE475-501N44A RF Power MOSFET are mod- RSS Doc #9200-0248 Rev 4 © 2003 IXYS RF ...