GB01SLT12-263 GeneSiC Semiconductor, GB01SLT12-263 Datasheet - Page 3

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GB01SLT12-263

Manufacturer Part Number
GB01SLT12-263
Description
Schottky Rectifier, 1200V, TO-263
Manufacturer
GeneSiC Semiconductor
Datasheet

Specifications of GB01SLT12-263

Repetitive Reverse Voltage Vrrm Max
1.2kV
Forward Voltage Vf Max
1.8V
Operating Temperature Range
-55°C To +175°C
Diode Case Style
TO-263
No. Of Pins
3
Diode Type
Schottky
Product
Schottky Silicon Carbide Diodes
Lead Free Status / Rohs Status
 Details
GB01SLT12-263
Figure 7: Typical Current versus Pulse Duration Curves at T
=150
O
C
Figure 8: Typical Transient Thermal Impedance
C
Package Dimensions:
TO-263
PACKAGE OUTLINE
NOTE
1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER.
2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS
3. CONTROLLED LEAD COPLANARITY <D>0.004 INCH MAXIMUM
Preliminary Datasheet
December 2010
Page 3 of 4
http://www.genesicsemi.com

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